Datasheet > 10-EY12NMA016ME-LS28F16T

10-EY12NMA016ME-LS28F16T

更新时间： 2023-09-03 20:25:17

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
23页	8340K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-EY12NMA016ME-LS28F16T

datasheet

Boost Switch Characteristics

figure 10.

MOSFET

figure 11.

MOSFET

Safe operating area

Gate voltage vs gate charge

I_D= f(V_DS

)

V_GS= f(Q_g)

1000

17,5

15,0

12,5

10,0

7,5

100

5,0

2,5

0,0

0,1

0,01

-2,5

-5,0

100

1000

10000

100

125

150

175

200

_DS(V)

Q_g(nC)

D =

I_D

single pulse

17.6

T_s=

T_j=

°C

V_GS

T_j=

T_jmax

24 Jan. 2023 / Revision 1

1...6 7 8910 11 12...23

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