Datasheet > 10-EY12NMA016ME-LS28F16T

10-EY12NMA016ME-LS28F16T

更新时间： 2023-09-03 20:25:17

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
23页	8340K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-EY12NMA016ME-LS28F16T 数据手册

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10-EY12NMA016ME-LS28F16T

datasheet

Boost Switch Characteristics

figure 6.

MOSFET

figure 7.

MOSFET

Typical output characteristics

I_D= f(V_DS

)

I_D= f(V_DS)

175

150

125

100

V_GS

-4 V

-2 V

0 V

150

125

100

1 V

3 V

5 V

7 V

9 V

11 V

13 V

15 V

17 V

19 V

21 V

-25

-50

-75

-100

-125

-150

-175

-10,0 -7,5

-5,0 -2,5

0,0

2,5

5,0

7,5

10,0 12,5

_DS(V)

V_DS(V)

t_p

250

μs

250

150

μs

°C

25 °C

V_GS

T_j=

125 °C

150 °C

T_j:

V_GSfrom -4 V to 21 V in steps of 2 V

figure 8.

MOSFET

figure 9.

MOSFET

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_D= f(V_GS

)

Z_th(j-s)= f(t_p)

-1

-2

0,5

0,2

-3

0,1

0,05

0,02

0,01

0,005

-4

-5

-4

-3

-2

-1

_GS(V)

t_p(s)

t_p

250

μs

D =

t_p/ T

0,898

25 °C

V_DS

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

MOSFET thermal model values

R (K/W)

τ (s)

5,87E-02

1,94E-01

4,24E-01

1,67E-01

5,45E-02

3,51E+00

5,46E-01

1,38E-01

1,40E-02

1,40E-03

24 Jan. 2023 / Revision 1

1...5 6 789 10 11...23

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