Datasheet > 10-EY126PA075M7-L197F78T

10-EY126PA075M7-L197F78T

更新时间： 2023-09-03 20:25:24

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
16页	3229K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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10-EY126PA075M7-L197F78T 数据手册

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10-EY126PA075M7-L197F78T

10-E2126PA075M7-L197F78Z

datasheet

Inverter Switching Characteristics

figure 9.

FWD

figure 10.

FWD

Typical recovered charge as a function of collector current

Typical recovered charge as a function of IGBT turn on gate resistor

Q _r= f(I _C

)

Q _r= f(R _gon)

Q_r

100

120

25 °C

140

160

R_gon(Ω)

I_C(A)

V_CE

V_GE

R _gon

600

±15

V_CE

V_GE

I _C

600

±15

25 °C

T_j:

125 °C

150 °C

125 °C

150 °C

figure 11.

FWD

figure 12.

FWD

Typical peak reverse recovery current current as a function of collector current

Typical peak reverse recovery current as a function of IGBT turn on gate resistor

I _RM= f(I _C

)

I _RM= f(R _gon)

100

I_RM

R_{go n}(Ω)

100

120

25 °C

140

160

I_C(A)

V_CE

600

±15

V_CE

V_GE

I _C

600

±15

25 °C

V_GE

T_j:

125 °C

150 °C

125 °C

150 °C

R _gon

27 May. 2019 / Revision 5

1...7 8 91011 12 13...16

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