Datasheet > 10-EY126PA075M7-L197F78T

10-EY126PA075M7-L197F78T

更新时间： 2023-09-03 20:25:24

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
16页	3229K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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10-EY126PA075M7-L197F78T 数据手册

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10-EY126PA075M7-L197F78T

10-E2126PA075M7-L197F78Z

datasheet

Inverter Switching Characteristics

figure 5.

IGBT

figure 6.

IGBT

Typical switching times as a function of collector current

Typical switching times as a function of gate resistor

t = f(I _C

)

t = f(R _g)

t_d(on)

t_d(off)

t_d(on)

t_d(off)

t_r

0,1

t_f

t_r

0,01

100

120

140

160

R_g(Ω)

I_C(A)

With an inductive load at

T_j=

150

600

±15

°C

T_j=

150

600

±15

°C

V_CE

V_GE

R _gon

R _goff

V_GE

I _C

figure 7.

FWD

figure 8.

FWD

Typical reverse recovery time as a function of collector current

Typical reverse recovery time as a function of IGBT turn on gate resistor

t_rr= f(I _C

)

t_rr= f(R _gon

)

0,8

t_rr

0,6

t_rr

0,4

0,2

0,4

0,2

t_rr

100

120

25 °C

140

160

R_gon(Ω)

I_C(A)

V_CE

600

±15

V_CE

600

25 °C

V_GE

T_j:

V_GE

I _C

±15

T_j:

125 °C

150 °C

125 °C

150 °C

R _gon

27 May. 2019 / Revision 5

1...6 7 8910 11 12...16

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