Datasheet > 10-EY124PA016ME01-LP49F16T

10-EY124PA016ME01-LP49F16T

更新时间： 2023-09-03 20:36:09

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	6673K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-EY124PA016ME01-LP49F16T

datasheet

H-Bridge Switch Characteristics

figure 1.

MOSFET

figure 2.

MOSFET

Typical output characteristics

I_D= f(V_DS

)

I_D= f(V_DS)

250

200

150

100

V_GS

-20 V

-18 V

-16 V

-14 V

-12 V

-10 V

-8 V

-6 V

-4 V

-2 V

0 V

200

150

100

2 V

4 V

-50

6 V

8 V

-100

-150

-200

-250

10 V

12 V

14 V

16 V

18 V

20 V

-10,0 -7,5

-5,0 -2,5

0,0

2,5

5,0

7,5

10,0 12,5

_DS(V)

V_DS(V)

t_p

250

μs

250

150

μs

°C

25 °C

V_GS

T_j=

125 °C

150 °C

T_j:

V_GSfrom -20 V to 20 V in steps of 2 V

figure 3.

MOSFET

figure 4.

MOSFET

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_D= f(V_GS

)

Z_th(j-s)= f(t_p)

150

125

100

-1

-2

0,5

0,2

-3

0,1

0,05

0,02

0,01

0,005

-4

-5

-4

-3

-2

-1

_GS(V)

t_p(s)

t_p

250

μs

D =

t_p/ T

0,474

25 °C

V_DS

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

MOSFET thermal model values

R (K/W)

τ (s)

5,06E-02

5,76E-02

1,56E-01

1,33E-01

7,64E-02

2,67E+00

5,55E-01

9,62E-02

1,90E-02

1,82E-03

05 May. 2023 / Revision 1

1...3 4 567 8 9...17

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