Datasheet > 10-EY124PA016ME01-LP49F16T

10-EY124PA016ME01-LP49F16T

更新时间： 2023-09-03 20:36:09

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	6673K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-EY124PA016ME01-LP49F16T

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Dynamic

19,84

18,88

18,56

6,72

t_d(on)

Turn-on delay time

125

150

t_r

t_d(off)

t_f

Rise time

125

150

6,4

R_gon= 2 Ω

R_goff= 2 Ω

42,24

44,8

Turn-off delay time

125

150

45,76

9,4

Fall time

125

150

9,22

9,44

Q_rFWD=0,776 µC

Q_rFWD=1,06 µC

Q_rFWD=1,17 µC

0,365

0,35

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

Peak recovery current

Reverse recovery time

Recovered charge

125

150

mWs

0,366

0,125

0,118

0,129

95,84

128,28

139,79

15,39

17,51

18,71

0,776

1,06

E_off

-4/15

600

125

150

I_RRM

125

150

t_rr

125

150

di/dt=12690 A/µs

di/dt=13506 A/µs

di/dt=13627 A/µs

Q_r

125

150

μC

1,17

0,387

0,544

0,608

17483

27449

29479

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

mWs

A/µs

(di_rf/dt)_max

125

150

05 May. 2023 / Revision 1

1 2 345 6 7...17

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