Datasheet > 0912-25

0912-25

更新时间： 2024-09-11 02:51:19

品牌	Logo	应用领域
GHZTECH		脉冲
页数	文件大小	规格书
3页	300K
描述
25 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz

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0912-25 数据手册

0912-25

25 Watts, 50 Volts, Pulsed

Avionics 960 - 1215 MHz

GENERAL DESCRIPTION

CASE OUTLINE

55CX, STYLE 1

The 0912-25 is a COMMON BASE bipolar transistor. It is designed for

pulsed systems in the frequency band 960-1215 MHz. The device has gold

thin-film metallization for proven highest MTTF. The transistor includes

input prematch for broadband capability. Low thermal resistance package

reduces junction temperature, extends life.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25^oC²

125 Watts

Maximum Voltage and Current

BVces

BVebo Emitter to Base Voltage

Ic Collector Current

Collector to Base Voltage

60 Volts

4.0 Volts

2.5 Amps

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to + 150^oC

+ 200^oC

ELECTRICAL CHARACTERISTICS @ 25 ^OC

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX UNITS

Pout

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

F = 960-1215 MHz

Vcc = 50 Volts

PW = 10 µsec

DF = 1 %

Watts

3.5

8.5

10:1

VSWR

F = 1090 MHz

BVebo

BVces

Cob

Emitter to Base Breakdown

Collector to Emitter Breakdown

Capacitance Collector to Base

DC - Current Gain

Ie = 25 mA

Ic = 75 mA

Vcb = 50 Volts

Ic =300 mA, Vce =5 V

4.0

Volts

h_FE

jc²

Thermal Resistance

1.4

^oC/W

Note 1: At rated output power and pulse conditions.

2: At rated pulse conditions

Initial Issue June 1, 1994

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

12 3

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