Datasheet > ZXMS81045SPQ

ZXMS81045SPQ

更新时间： 2023-12-06 20:07:59

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美台 - DIODES		/
页数	文件大小	规格书
34页	1741K
描述
IntelliFET High-Side Power Switch

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ZXMS81045SPQ 数据手册

ZXMS81045SPQ

Resistive Load Switching (continued)

The power MOSFET turn-ON and turn-OFF processes are determined by the device itself, with rates suitable for EMC compatibility.

Figure 7.

Typical V_DSClamp Characteristic

V_IN

I_L

V_OUT

0 V

V_DS(AZ

-V_OUT

Figure 8.

Switching an Inductive Load

Maximum Load inductance

Stored inductive load ring-OFF energy is dissipated in the MOSFET during switching and load ring-off clamping. Additional energy is also supplied

to the system by the V_Ssupply until the load current I_Lreaches zero. This causes a temporary rise in MOSFET temperature after turn-OFF begins.

The temperature reached depends on the starting temperature, thermal environment, load current I_L, load inductance L_L, load resistance R_Land

supply voltage V_S.

Inverse Current Capability

In the ON-state the device will remain on if the output current becomes inverse until or unless the inverse current becomes high enough to create a

-V_DSapproaching body diode conduction. During inverse current conduction, I_L(INV), the IS sense output will be zero. If body diode conduction occurs

all functions are disabled or unspecified until the inverse current becomes very small.

If inverse current is present in the OFF-state body diode conduction occurs and all functions are disabled or unspecified. When inverse current is

removed or becomes very small then turn-ON and normal function become possible.

8 of 34

www.diodes.com

July 2023

ZXMS81045SPQ

Document number: DS44103 Rev. 4 - 2

1...5 6 789 10 11...34

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