Datasheet > ZXMS81045SPQ

ZXMS81045SPQ

更新时间： 2023-12-06 20:07:59

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
34页	1741K
描述
IntelliFET High-Side Power Switch

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ZXMS81045SPQ 数据手册

ZXMS81045SPQ

Power Stage Electrical Characteristics

Unless otherwise specified: 8V < Vs < 18V, T_j= 25°C; typical values based on VS = 13.5V

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Output Characteristics

V_IN= 4.5V, I_L= 4A

T_j= 150°C

mΩ

ON-state resistance (Note 14)

R_DS(ON)

mΩ

V_IN= 4.5V, I_L= 4A

Nominal load current (Notes 15,16)

I_L(NOM)

T_amb= 85°C, T_j< 150°C

V_DS(NL)

V_DS(AZ)

Voltage drop regulation at low I_L

Output clamp voltage

I_L= 50mA

I_L= 20mA

0.1

0.5

µA

V_INfloating, V_OUT= 0V

Output leakage current

I_L(OFF)

V_INfloating, V_OUT= 0V

T_amb= 150°C

µA

Inverse output current (Note 16)

I_L(INV)

V_S< V_OUT

Timings

0.1

0.25

0.5

V/µs

µs

dV/dt_ON

dV/dt_OFF

t_ON

Slew rate ON, 30% to 70% V_S

Slew rate OFF, 70% to 30% V_S

Turn-ON time to 90% V_S

230

100

150

R_L= 4Ω, V_S= 13.5V

µs

170

t_OFF

Turn-OFF time to 10% V_S

Turn-ON delay to 10% V_S

Turn-OFF delay to 90% V_S

µs

t_ON(DELAY)

t_OFF(DELAY)

µs

R_L= 4Ω, V_S= 18V

V_OUT= 90% V_S

Switch ON energy

Switch OFF energy

0.8

0.7

E_ON

R_L= 4Ω, V_S= 18V

V_OUT= 10% V_S

E_OFF

Notes:

14.

15.

16.

Guaranteed across temperature range with inset limit at production test

Device mounted on vertical 50 x 50 1.5 mm FR4 single-sided PCB with 6cm² 2 oz copper in free air

ON-state reverse conduction, functional test only

9 of 34

www.diodes.com

July 2023

ZXMS81045SPQ

Document number: DS44103 Rev. 4 - 2

1...6 7 8910 11 12...34

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