Datasheet > ZXMS81045SPQ

ZXMS81045SPQ

更新时间： 2023-12-06 20:07:59

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
34页	1741K
描述
IntelliFET High-Side Power Switch

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ZXMS81045SPQ 数据手册

ZXMS81045SPQ

Resistive Load Switching

The power MOSFET turn-ON and turn-OFF processes are determined by the device itself, with rates suitable for EMC compatibility.

V_IN

t_ON

t_OFF

90%

V_OUT

V_IN

50%

dV/dt_ON

dV/dt_OFF

25%

10%

Figure 5.

Switching a Resistive Load

Output Inductive Load clamp

To de-energise inductive loads the OUT terminal must be allowed to swing below ground (V_OUTrings negative) during the OFF-state.

Figure 6.

Output Clamp

A low-impedance active voltage clamp uses the MOSFET channel to limit the maximum voltage across the MOSFET drain-source terminals,

limiting the swing of OUT below Vs to safe V_DS(AZ). This prevents avalanche of the MOSFET or associated circuitry.

7 of 34

www.diodes.com

July 2023

ZXMS81045SPQ

Document number: DS44103 Rev. 4 - 2

1...4 5 678 9 10...34

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