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ZX5T849ZTA PDF预览

ZX5T849ZTA

更新时间: 2024-09-30 20:15:47
品牌 Logo 应用领域
美台 - DIODES 开关晶体管
页数 文件大小 规格书
6页 120K
描述
Power Bipolar Transistor, 6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SOT-89, 3 PIN

ZX5T849ZTA 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SOT-89包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.36
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):6 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):20
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):140 MHzBase Number Matches:1

ZX5T849ZTA 数据手册

 浏览型号ZX5T849ZTA的Datasheet PDF文件第2页浏览型号ZX5T849ZTA的Datasheet PDF文件第3页浏览型号ZX5T849ZTA的Datasheet PDF文件第4页浏览型号ZX5T849ZTA的Datasheet PDF文件第5页浏览型号ZX5T849ZTA的Datasheet PDF文件第6页 
ZX5T849Z  
30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89  
SUMMARY  
BVCEO = 30V : RSAT = 23m ; IC = 6.0A  
DESCRIPTION  
Packaged in the SOT89 outline this new 5th generation low saturation 30V  
NPN transistor offers extrem ely low on state losses m aking it ideal for use in  
DC-DC circuits and various driving and power m anagem ent functions.  
FEATURES  
SOT89  
Extem ely low equivalent on-resistance; RSAT = 23m at 6.5A  
6 am ps continuous current  
Up to 20 am ps peak current  
Very low saturation voltages  
Excellent hFE characteristics up to 20 am ps  
APPLICATIONS  
DC - DC converters  
MOSFET gate drivers  
Charging circuits  
Power switches  
Motor control  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY PER  
REEL  
ZX5T849ZTA  
7”  
12m m  
1000 units  
em bossed  
DEVICE MARKING  
TOP VIEW  
849  
ISSUE 3 - DECEMBER 2004  
1
S E M IC O N D U C T O R S  

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