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ZX5T853GTA PDF预览

ZX5T853GTA

更新时间: 2024-11-22 22:06:15
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管功率双极晶体管开关光电二极管
页数 文件大小 规格书
6页 127K
描述
100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

ZX5T853GTA 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SOT-223, 4 PINReach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.22
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):6 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):10
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):130 MHzBase Number Matches:1

ZX5T853GTA 数据手册

 浏览型号ZX5T853GTA的Datasheet PDF文件第2页浏览型号ZX5T853GTA的Datasheet PDF文件第3页浏览型号ZX5T853GTA的Datasheet PDF文件第4页浏览型号ZX5T853GTA的Datasheet PDF文件第5页浏览型号ZX5T853GTA的Datasheet PDF文件第6页 
ZX5T853G  
100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR  
IN SOT223  
SUMMARY  
BVCEO = 100V : RSAT = 36m ; IC = 6A  
DESCRIPTION  
Packaged in the SOT223 outline this new 5th generation low saturation 100V NPN  
transistor offers extremely low on state losses making it ideal for use in DC-DC  
circuits and various driving and power management functions.  
FEATURES  
SOT223  
6 am ps continuous current  
Up to 10 am ps peak current  
Very low saturation voltages  
APPLICATIONS  
Motor driving  
Line switching  
High side switches  
Subscriber line interface cards (SLIC)  
ORDERING INFORMATION  
PINOUT  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY PER  
REEL  
ZX5T853GTA  
ZX5T853GTC  
7”  
12m m  
1000 units  
4000 units  
em bossed  
13”  
DEVICE MARKING  
X5T853  
TOP VIEW  
ISSUE 2 - SEPTEMBER 2003  
1
S E M IC O N D U C T O R S  

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