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ZX5T851GTA PDF预览

ZX5T851GTA

更新时间: 2024-02-23 12:49:28
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管
页数 文件大小 规格书
6页 122K
描述
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

ZX5T851GTA 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PSSO-F3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.35
外壳连接:COLLECTOR最大集电极电流 (IC):5 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PSSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):130 MHz
Base Number Matches:1

ZX5T851GTA 数据手册

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ZX5T851G  
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223  
SUMMARY  
BV  
= 60V : R  
= 35m ; I = 6A  
SAT C  
CEO  
DESCRIPTION  
Packaged in the SOT223 outline this new 5th generation low saturation 60V  
NPN transistor offers extrem ely low on state losses m aking it ideal for use in  
DC-DC circuits and various driving and power m anagem ent functions.  
FEATURES  
SOT223  
Extrem ely low equivalent on-resistance; RSAT = 35m V at 6A  
6 am ps continuous current  
Up to 20 am ps peak current  
Very low saturation voltages  
Excellent hFE characteristics up to 10 am ps  
APPLICATIONS  
Em ergency lighting circuits  
Motor driving (including DC fans)  
Solenoid, relay and actuator drivers  
DC Modules  
Backlight Inverters  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY PER  
REEL  
ZX5T851GTA  
ZX5T851GTC  
7”  
12m m  
1000 units  
4000 units  
em bossed  
13”  
TOP VIEW  
DEVICE MARKING  
X5T851  
ISSUE 2 - SEPTEMBER 2003  
1
S E M IC O N D U C T O R S  

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