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ZX5T851GTC

更新时间: 2024-10-01 07:42:39
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
6页 123K
描述
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

ZX5T851GTC 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOT-223
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.31Is Samacsys:N
其他特性:HIGH RELIABILITY外壳连接:COLLECTOR
最大集电极电流 (IC):6 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):20
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):3 W
认证状态:Not Qualified参考标准:AEC-Q101
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):130 MHzBase Number Matches:1

ZX5T851GTC 数据手册

 浏览型号ZX5T851GTC的Datasheet PDF文件第2页浏览型号ZX5T851GTC的Datasheet PDF文件第3页浏览型号ZX5T851GTC的Datasheet PDF文件第4页浏览型号ZX5T851GTC的Datasheet PDF文件第5页浏览型号ZX5T851GTC的Datasheet PDF文件第6页 
ZX5T851G  
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223  
SUMMARY  
BV  
= 60V : R  
= 35m ; I = 6A  
SAT C  
CEO  
DESCRIPTION  
Packaged in the SOT223 outline this new 5th generation low saturation 60V  
NPN transistor offers extrem ely low on state losses m aking it ideal for use in  
DC-DC circuits and various driving and power m anagem ent functions.  
FEATURES  
SOT223  
Extrem ely low equivalent on-resistance; RSAT = 35m V at 6A  
6 am ps continuous current  
Up to 20 am ps peak current  
Very low saturation voltages  
Excellent hFE characteristics up to 10 am ps  
APPLICATIONS  
Em ergency lighting circuits  
Motor driving (including DC fans)  
Solenoid, relay and actuator drivers  
DC Modules  
Backlight Inverters  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY PER  
REEL  
ZX5T851GTA  
ZX5T851GTC  
7”  
12m m  
1000 units  
4000 units  
em bossed  
13”  
TOP VIEW  
DEVICE MARKING  
X5T851  
ISSUE 2 - SEPTEMBER 2003  
1
S E M IC O N D U C T O R S  

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