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ZX5T951GTC PDF预览

ZX5T951GTC

更新时间: 2024-01-22 07:04:32
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管功率双极晶体管开关光电二极管
页数 文件大小 规格书
6页 125K
描述
60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

ZX5T951GTC 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PSSO-F3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.34
外壳连接:COLLECTOR最大集电极电流 (IC):4.3 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):10JESD-30 代码:R-PSSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):120 MHz
Base Number Matches:1

ZX5T951GTC 数据手册

 浏览型号ZX5T951GTC的Datasheet PDF文件第2页浏览型号ZX5T951GTC的Datasheet PDF文件第3页浏览型号ZX5T951GTC的Datasheet PDF文件第4页浏览型号ZX5T951GTC的Datasheet PDF文件第5页浏览型号ZX5T951GTC的Datasheet PDF文件第6页 
ZX5T951G  
60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223  
SUMMARY  
BVCEO = -60V : RSAT = 39m ; IC = -5.5A  
DESCRIPTION  
Packaged in the SOT223 outline this new 5th generation low saturation 60V  
PNP transistor offers extrem ely low on state losses m aking it ideal for use in  
DC-DC circuits and various driving and power m anagem ent functions.  
FEATURES  
SOT223  
Extrem ely low equivalent on-resistance; RSAT = 39m V at 5A  
5.5 am ps continuous current  
Up to 15 am ps peak current  
Very low saturation voltages  
Excellent gain characteristics specified up to 10 Am ps  
APPLICATIONS  
DC - DC Converters  
MOSFET gate drivers  
Charging circuits  
Power switches  
Motor control  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY PER  
REEL  
ZX5T951GTA  
ZX5T951GTC  
7”  
12m m  
1000 units  
4000 units  
em bossed  
13”  
TOP VIEW  
DEVICE MARKING  
X5T951  
ISSUE 2 - SEPTEMBER 2003  
1
S E M IC O N D U C T O R S  

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