Datasheet > ZVP3310FTA

ZVP3310FTA

更新时间： 2024-01-24 17:04:21

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管 PC
页数	文件大小	规格书
1页	120K
描述
100 Volt VDS

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中文翻译

获取价格

技术参数
数据手册

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ZVP3310FTA 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.74
Is Samacsys：	N	Base Number Matches：	1

ZVP3310FTA 数据手册

ZVP3310F

FEATURES

100 Volt V_DS

R_DS(on)=20Ω

COMPLEMENTARY TYPE -

ZVN3310F

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_DS

VALUE

-100

UNIT

Drain-Source Voltage

Continuous Drain Current at T_amb=25°C

Pulsed Drain Current

I_D

I_DM

-1.2

Gate Source Voltage

V_GS

± 20

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

P_tot

330

°C

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown

Voltage

BV_DSS

-100

I_D=-1mA, V_GS=0V

I_D=-1mA, V_DS= V_GS

V_GS=± 20V, V_DS=0V

Gate-Source Threshold

Voltage

V_GS(th)

-1.5

-3.5

-20

Gate-Body Leakage

I_GSS

I_DSS

Zero Gate Voltage Drain

Current

-1

-50

V_DS=-100V, V_GS=0

V_DS=-80V, V_GS=0V, T=125°C

µA

On-State Drain Current

-300

V_DS=-25 V, V_GS

I_D(on)

Static Drain-Source On-State R_DS(on)

Resistance

V_GS=-10V, I_D=-150mA

Ω

Forward Transconductance

g_fs

V_DS=-25V, I_D=-150mA

Input Capacitance

C_iss

C_oss

Common Source Output

Capacitance

V_DS=-25V, V_GS=0V, f=1MHz

Reverse Transfer

Capacitance

C_rss

Turn-On Delay Time

Rise Time

t_d(on)

t_r

t_d(off)

t_f

V_DD≈-25V, I_D=-150mA

Turn-Off Delay Time

Fall Time

1 of 1

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中文翻译

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