ZVP4424ASM

更新时间： 2024-01-24 15:33:21

品牌	Logo	应用领域
美台 - DIODES		晶体小信号场效应晶体管开关
页数	文件大小	规格书
3页	112K
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中文翻译

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数据手册

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ZVP4424ASM 数据手册

P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 SEPTEMBER 94

ZVP4424A

FEATURES

240 Volt V_DS

R_DS(on)=9Ω

Low threshold

APPLICATIONS

Electronic Hook Switch

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_DS

VALUE

UNIT

Drain-Source Voltage

-240

-200

Continuous Drain Current at T_amb=25°C

Pulsed Drain Current

I_D

I_DM

-1

Gate Source Voltage

V_GS

± 40

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

P_tot

750

°C

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN. TYP

MAX. UNIT CONDITIONS.

Drain-Source Breakdown

Voltage

BV_DSS

-240

I_D=-1mA, V_GS=0V

ID=-1mA, V_DS= V_GS

V_GS=± 40V, V_DS=0V

Gate-Source Threshold

Voltage

V_GS(th)

-0.7

-1.4

-2.0

100

Gate-Body Leakage

I_GSS

I_DSS

Zero Gate Voltage Drain

Current

-10

-100

V_DS=-240 V, V_GS=0

V_DS=-190V, V_GS=0V, T=125°C

µA

On-State Drain Current

I_D(on)

-0.75 -1.0

V_DS=-10 V, V_GS=-10V

Static Drain-Source

On-State Resistance

R_DS(on)

7.1

8.8

V_GS=-10V,I_D=-200mA

V_GS=-3.5V,I_D=-100mA

Ω

Forward

Transconductance (1) (2)

g_fs

125

V_DS=-10V,I_D=-0.2A

Input Capacitance (2)

C_iss

100

200

Common Source Output

Capacitance (2)

C_oss

V_DS=-25V, V_GS=0V, f=1MHz

Reverse Transfer

Capacitance (2)

C_rss

Turn-On Delay Time (2)(3) t_d(on)

Rise Time (2)(3) t_r

Turn-Off Delay Time (2)(3) t_d(off)

Fall Time (2)(3) t_f

V_DD≈−50V, I_D=-0.25A,

V_GEN=-10V

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.

(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

3-436

12 3

中文翻译

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