Datasheet > ZUMT2222A

ZUMT2222A

更新时间： 2024-09-23 21:55:27

品牌	Logo	应用领域
其他 - ETC		晶体开关晶体管光电二极管局域网
页数	文件大小	规格书
2页	33K
描述
SOT323 NPN SILICON PLANAR SWITCHING TRANSISTOR

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数据手册

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ZUMT2222A 数据手册

SOT323 NPN SILICON PLANAR

SWITCHING TRANSISTOR

ZUMT2222A

ISSUE 1 – NOVEMBER 1998

FEATURES

Fast switching

PARTMARKING DETAIL

COMPLEMENTARY TYPE

– T16

– ZUMT2907A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

600

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at T

°C

P_tot

330

T_j:T_stg

-55 to +150

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

V_(BR)CBO

I_C=10µA, I_E=0

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

V_(BR)CEO

I_C=10mA, I_B=0

I_E=10µA, I_C=0

V_CB=60V, I_E=0

Emitter-Base Breakdown V_(BR)EBO

Voltage

Collector Cut-Off Current

I_CBO

µA

V_CB=60V, I_E=0, T_amb=150°C

Emitter Cut-Off Current

I_EBO

I_CEX

V_EB=3V, I_C=0

Collector-Emitter Cut-Off

Current

V_CE=60V, V_EB(off)=3V

Collector-Emitter

V_CE(sat)

V_BE(sat)

h_FE

0.3

1.0

I_C=150mA, I_B=15mA*

I_C=500mA, I_B=50mA*

Saturation Voltage

Base-Emitter

Saturation Voltage

0.6

1.2

2.0

I_C=150mA, I_B=15mA*

I_C=500mA, I_B=50mA*

Static Forward Current

Transfer Ratio

100

I_C=0.1mA, V_CE=10V*

I_C=1mA, V_CE=10V

I_C=10mA, V_CE=10V*

I_C=10mA, V_CE=10V, T_amb=-55°C

I_C=150mA, V_CE=10V*

I_C=150mA, V_CE=1V*

I_C=500mA, V_CE=10V*

300

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for this device

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