Datasheet > ZUMT591TA

ZUMT591TA

更新时间： 2024-09-24 20:06:59

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
2页	49K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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ZUMT591TA 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	15 weeks	风险等级：	5.57
JESD-609代码：	e3	湿度敏感等级：	1
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

ZUMT591TA 数据手册

SOT323 PNP SILICON PLANAR

HIGH PERFORMANCE TRANSISTOR

DRAFT SPECIFICATION ISSUE A – OCTOBER 94

ZUMT591

FEATURES

Extremely low saturation voltage

500mW power dissipation

1 Amp continuous collector current (I_C)

APPLICATIONS

Ideally suited for space / weight critical applications

SOT323

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

-80

Collector-Emitter Voltage

Emitter-Base Voltage

-60

-5

Peak Pulse Current

-2

-1

Continuous Collector Current

Base Current

I_C

I_B

-200

°C

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

P_tot

500

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

TYP.

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

V_(BR)CBO

-80

-60

-5

I_C=-100µA, I_E=-0

I_C=-10mA*, I_B=-0

I_E=-100µA, I_C=-0

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

V_CEO(sus)

Emitter-Base Breakdown V_(BR)EBO

Voltage

Collector Cut-Off Current I_CBO

Collector Cut-Off Current I_CES

-100

V_CB=-60V

VCE=-60V

Emitter Cut-Off Current

I_EBO

V_EB=-4V, I_C=-0

Collector-Emitter

Saturation Voltage

V_CE(sat)

-0.3

-0.6

I_C=-500mA, I_B=-50mA*

I_C=-1A, I_B=-100mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

-1.2

I_C=-1A, I_B=-100mA*

Base-Emitter

Turn On Voltage

V_BE(on)

-1.0

IC=-1A, V_CE=-5V*

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2%

中文翻译

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