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ZUMT619 PDF预览

ZUMT619

更新时间: 2024-10-14 07:42:51
品牌 Logo 应用领域
美台 - DIODES 晶体开关晶体管光电二极管
页数 文件大小 规格书
3页 83K
描述
Super323?SOT323 NPN SILICON POWER (SWITCHING) TRANSISTOR

ZUMT619 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:1.04最大集电极电流 (IC):1 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):215 MHzBase Number Matches:1

ZUMT619 数据手册

 浏览型号ZUMT619的Datasheet PDF文件第2页浏览型号ZUMT619的Datasheet PDF文件第3页 
Super323 SOT323 NPN SILICON POWER  
ZUMT619  
(SWITCHING) TRANSISTOR  
ISSUE 2 - DECEMBER 2008  
FEATURES  
*
*
*
*
*
500mW POWER DISSIPATION  
IC CONT 1A  
2A Peak Pulse Current  
Excellent HFE Characteristics Up To 2A (pulsed)  
Extremely Low Equivalent On Resistance; RCE(sat)  
APPLICATIONS  
*
*
LCD backlighting inverter circuits  
Boost functions in DC-DC converters  
DEVICE TYPE  
ZUMT619  
COMPLEMENT  
ZUMT720  
PARTMARKING  
T63  
RCE(sat)  
160mat 1A  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
50  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current**  
Continuous Collector Current  
Base Current  
50  
V
5
V
2
A
IC  
1.0  
200  
A
IB  
mA  
mW  
Power Dissipation at Tamb=25°C  
Ptot  
385 †  
500 ‡  
Operating and Storage Temperature Tj:Tstg  
Range  
-55 to +150  
°C  
Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).  
Maximum power dissipation is calculated assuming that the device is mounted on FR4  
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.  

ZUMT619 替代型号

型号 品牌 替代类型 描述 数据表
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