Datasheet > ZTX955STOA

ZTX955STOA

更新时间： 2025-08-11 19:05:39

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
3页	71K
描述
元器件封装:E-Line;

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中文翻译

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数据手册

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ZTX955STOA 数据手册

PNP SILICON PLANAR MEDIUM POWER

HIGH CURRENT TRANSISTOR

ISSUE 3 JUNE 94

ZTX955

FEATURES

3 Amps continuous current

Up to 10 Amps peak current

Very low saturation voltage

Excellent gain characteristics up to 3 Amps

Spice model available

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

-180

-140

-6

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

-10

Continuous Collector Current

Practical Power Dissipation*

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

-3

P_totp

P_tot

1.58

°C

1.2

T_j:T_stg

-55 to +200

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

PARAMETER

SYMBOL MIN. TYP.

MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V_(BR)CBO

V_(BR)CER

V_(BR)CEO

V_(BR)EBO

I_CBO

-180

-140

-6

-210

-170

-8

I_C=-100µA

Collector-Emitter Breakdown

Voltag

IC=-1µA, RB ≤1KΩ

I_C=-10mA*

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

I_E=-100µA

Collector Cut-Off Current

Emitter Cut-Off Current

-50

-1

µA

V_CB=-150V

V_CB=-150V, T_amb=100°C

I_CER

R ≤1KΩ

-50

-1

µA

V_CB=-150V

V_CB=-150V, T_amb=100°C

I_EBO

-10

V_EB=-6V

Collector-Emitter Saturation

Voltage

V_CE(sat)

-30

-60

-90

-250

-60

I_C=-100mA, I_B=-5mA*

I_C=-500mA, I_B=-50mA*

I_C=-1A, I_B=-100mA*

I_C=-3A, I_B=-300mA*

-100

-120

-330

Base-Emitter

Saturation Voltage

V_BE(sat)

-920

-1050 mV

I_C=-3A, I_B=-300mA*

3-321

12 3

中文翻译

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