ZTX958SM

更新时间： 2024-11-25 12:57:55

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管功率双极晶体管局域网
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3页	68K
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数据手册

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ZTX958SM 数据手册

PNP SILICON PLANAR MEDIUM POWER

HIGH CURRENT TRANSISTOR

ISSUE 3 JUNE 94

ZTX958

FEATURES

0.5 Amp continuous current

Up to 1.5 Amps peak current

Very low saturation voltage

Excellent gain characteristics up to 1 Amp

Spice model available

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

-400

Collector-Emitter Voltage

Emitter-Base Voltage

-6

Peak Pulse Current

-1.5

Continuous Collector Current

Practical Power Dissipation*

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

-0.5

P_totp

P_tot

1.58

°C

1.2

T_j:T_stg

-55 to +200

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V_(BR)CBO

-400

-6

-600

-550

-8

I_C=-100µA

Collector-Emitter Breakdown V_(BR)CER

Voltag

IC=-1µA, RB ≤1KΩ

I_C=-10mA*

Collector-Emitter Breakdown V_(BR)CEO

Voltage

Emitter-Base Breakdown

Voltage

V_(BR)EBO

I_E=-100µA

Collector Cut-Off Current

Emitter Cut-Off Current

I_CBO

-50

-1

µA

V_CB=-300V

V_CB=-300V, T_amb=100°C

I_CER

R ≤1KΩ

-50

-1

µA

V_CB=-300V

V_CB=-300V, T_amb=100°C

I_EBO

-10

V_EB=-6V

Collector-Emitter Saturation

Voltage

V_CE(sat)

-100

-150

-300

-150

-200

-400

I_C=-10mA, I_B=-1mA*

I_C=-100mA, I_B=-10mA*

I_C=-500mA, I_B=-100mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

-790

-900

I_C=-500mA, I_B=-100mA*

3-330

12 3

中文翻译

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