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ZTX957 PDF预览

ZTX957

更新时间: 2024-12-09 22:18:51
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管局域网
页数 文件大小 规格书
3页 65K
描述
PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR

ZTX957 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:TO-92 COMPATIBLE, 3 PINReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.14最大集电极电流 (IC):1 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):90JESD-30 代码:R-PSIP-W3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):85 MHz
VCEsat-Max:0.2 VBase Number Matches:1

ZTX957 数据手册

 浏览型号ZTX957的Datasheet PDF文件第2页浏览型号ZTX957的Datasheet PDF文件第3页 
PNP SILICON PLANAR MEDIUM POWER  
HIGH CURRENT TRANSISTOR  
ISSUE 3 – JUNE 94  
ZTX957  
FEATURES  
*
*
*
*
*
1 Amp continuous current  
Up to 2 Amps peak current  
Very low saturation voltage  
Excellent gain characteritics up to 1 Amp  
Spice model available  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
-330  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-300  
V
-6  
V
Peak Pulse Current  
-2  
-1  
A
Continuous Collector Current  
Practical Power Dissipation*  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
A
Ptotp  
Ptot  
1.58  
W
W
°C  
1.2  
Tj:Tstg  
-55 to +200  
*The power which can be dissipated assuming the device is mounted in a typical manner on a  
P.C.B. with copper equal to 1 inch square minimum  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C unless otherwise stated)  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V(BR)CBO  
-330  
-330  
-300  
-6  
-440  
-440  
-400  
-8  
V
V
V
V
IC=-100µA  
Collector-Emitter Breakdown V(BR)CER  
Voltag  
IC=-1µA, RB 1KΩ  
IC=-10mA*  
Collector-Emitter Breakdown V(BR)CEO  
Voltage  
Emitter-Base Breakdown  
Voltage  
V(BR)EBO  
IE=-100µA  
Collector Cut-Off Current  
Collector Cut-Off Current  
Emitter Cut-Off Current  
ICBO  
-50  
-1  
nA  
µA  
VCB=-300V  
VCB=-300V, Tamb=100°C  
ICER  
R 1KΩ  
-50  
-1  
nA  
µA  
VCB=-300V  
VCB=-300V, Tamb=100°C  
IEBO  
-10  
nA  
VEB=-6V  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
-60  
-100  
-140  
-100  
-150  
-200  
mV  
mV  
mV  
IC=-100mA, IB=-10mA*  
IC=-500mA, IB=-100mA*  
IC=-1A, IB=-300mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
-870  
-1000 mV  
IC=-1A, IB=-300mA*  
3-327  

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