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ZTX652STOB PDF预览

ZTX652STOB

更新时间: 2024-10-14 13:16:15
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管局域网
页数 文件大小 规格书
3页 65K
描述
Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX652STOB 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:TO-92 COMPATIBLE, E-LINE PACKAGE-3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.18
最大集电极电流 (IC):2 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):25
JESD-30 代码:R-PSIP-W3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN认证状态:Not Qualified
参考标准:CECC表面贴装:NO
端子形式:WIRE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):140 MHzBase Number Matches:1

ZTX652STOB 数据手册

 浏览型号ZTX652STOB的Datasheet PDF文件第2页浏览型号ZTX652STOB的Datasheet PDF文件第3页 
NPN SILICON PLANAR  
ZTX652  
ZTX653  
MEDIUM POWER TRANSISTORS  
ISSUE 2 – JULY 94  
FEATURES  
*
*
*
*
100 Volt VCEO  
2 Amp continuous current  
Low saturation voltage  
Ptot=1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
ZTX652  
100  
ZTX653  
120  
UNIT  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
A
A
80  
100  
5
6
2
Peak Pulse Current  
Continuous Collector Current  
IC  
Power Dissipation at Tamb=25°C  
derate above 25°C  
Ptot  
1
5.7  
W
mW/°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
ZTX652  
Tj:Tstg  
-55 to +200  
°C  
= 25°C unless otherwise stated).  
amb  
ZTX653  
PARAMETER  
SYMBOL  
UNIT CONDITIONS.  
MIN. TYP. MAX. MIN. TYP. MAX.  
Collector-Base  
Breakdown  
Voltage  
V(BR)CBO 100  
120  
100  
5
V
V
V
IC=100µA  
IC=10mA*  
IE=100µA  
Collector-Emitter  
Breakdown  
Voltage  
V(BR)CEO 80  
Emitter-Base  
Breakdown  
Voltage  
V(BR)EBO  
5
Collector Cut-Off  
Current  
ICBO  
0.1  
10  
VCB=80V  
VCB=100V  
VCB=80V,T =100°C  
VCB=100V,T =100°C  
µA  
µA  
µA  
µA  
0.1  
10  
Emitter Cut-Off  
Current  
IEBO  
0.1  
0.1  
VEB=4V  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
0.13 0.3  
0.23 0.5  
0.13 0.3  
0.23 0.5  
V
V
IC=1A, IB=100mA*  
IC=2A, IB=200mA*  
Base-Emitter  
Saturation Voltage  
0.9  
1.25  
0.9  
1.25  
V
IC=1A, IB=100mA*  
Base-Emitter  
Turn-On Voltage  
0.8  
1
0.8  
1
V
IC=1A, VCE=2V*  
3-222  

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