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ZTX553 PDF预览

ZTX553

更新时间: 2024-11-18 07:42:51
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页数 文件大小 规格书
2页 54K
描述
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

ZTX553 数据手册

 浏览型号ZTX553的Datasheet PDF文件第2页 
PNP SILICON PLANAR  
ZTX552  
ZTX553  
MEDIUM POWER TRANSISTORS  
ISSUE 1 – MARCH 94  
FEATURES  
*
*
*
100 Volt VCEO  
1 Amp continuous current  
Ptot=1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
ZTX552  
-100  
ZTX553  
-120  
UNIT  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
A
A
-80  
-100  
-5  
-2  
-1  
Peak Pulse Current  
Continuous Collector Current  
IC  
Power Dissipation: at Tamb=25°C  
derate above 25°C  
Ptot  
1
5.7  
W
mW/ °C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +200  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL  
ZTX552  
ZTX553  
UNIT CONDITIONS.  
MIN. MAX. MIN. MAX.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO -100  
VCEO(sus) -80  
-120  
-100  
-5  
V
IC=-100µA  
IC=-10mA  
IE=-100µA  
Collector-Emitter  
Sustaining Voltage  
V
Emitter-Base  
Breakdown Voltage  
V(BR)EBO  
ICBO  
-5  
V
Collector Cut-Off  
Current  
-0.1  
VCB=-80V  
VCB=-100V  
µA  
-0.1  
Emitter Cut-Off Current IEBO  
-0.1  
-0.1  
VEB=-4V  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
-0.25  
-0.25  
V
IC=-150mA, IB=-15mA*  
Base-Emitter  
Saturation Voltage  
-1.1  
-1.0  
150  
-1.1  
-1.0  
200  
V
V
IC=-150mA, IB=-15mA*  
IC=-150mA, VCE=-10V*  
Base-Emitter  
Turn-onn Voltage  
Static Forward Current hFE  
Transfer Ratio  
40  
10  
40  
10  
IC=-150mA, VCE=-10V*  
IC=-1A, VCE=-10V*  
Transition Frequency  
fT  
150  
150  
MHz  
MHz  
IC=-50mA, VCE=-10V  
f=100MHz  
Output Capacitance  
Cobo  
12  
12  
VCB=-10V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
3-196  

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