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ZTX753

更新时间: 2024-11-21 07:42:51
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美台 - DIODES 晶体小信号双极晶体管开关局域网
页数 文件大小 规格书
3页 65K
描述
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

ZTX753 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-92
包装说明:IN-LINE, R-PSIP-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75Factory Lead Time:15 weeks
风险等级:0.74Is Samacsys:N
最大集电极电流 (IC):2 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):25
JEDEC-95代码:TO-92JESD-30 代码:R-PSIP-W3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:200 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
参考标准:CECC子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):140 MHz
Base Number Matches:1

ZTX753 数据手册

 浏览型号ZTX753的Datasheet PDF文件第2页浏览型号ZTX753的Datasheet PDF文件第3页 
PNP SILICON PLANAR  
ZTX752  
ZTX753  
MEDIUM POWER TRANSISTORS  
ISSUE 2 – JULY 94  
FEATURES  
*
*
*
*
100 Volt VCEO  
2 Amp continuous current  
Low saturation voltage  
Ptot=1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
ZTX752  
-100  
ZTX753  
-120  
UNIT  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
A
A
-80  
-100  
-5  
-6  
-2  
Peak Pulse Current  
Continuous Collector Current  
IC  
Power Dissipation at Tamb=25°C  
derate above 25°C  
Ptot  
1
5.7  
W
mW/°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
ZTX752  
Tj:Tstg  
-55 to +200  
°C  
= 25°C unless otherwise stated).  
amb  
ZTX753  
PARAMETER  
SYMBOL  
UNIT CONDITIONS.  
MIN. TYP. MAX. MIN. TYP. MAX.  
Collector-Base  
Breakdown  
Voltage  
V(BR)CBO -100  
V(BR)CEO -80  
V(BR)EBO -5  
ICBO  
-120  
-100  
-5  
V
V
V
IC=-100µA  
IC=-10mA*  
IE=-100µA  
Collector-Emitter  
Breakdown  
Voltage  
Emitter-Base  
Breakdown  
Voltage  
Collector Cut-Off  
Current  
-0.1  
-10  
VCB=-80V  
VCB=-100V  
VCB=-80V,T =100°C  
VCB=-100V,T =100°C  
µA  
µA  
µA  
µA  
-0.1  
-10  
Emitter Cut-Off  
Current  
IEBO  
-0.1  
-0.1  
VEB=-4V  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
-0.17 -0.3  
-0.30 -0.5  
-0.17 -0.3  
-0.30 -0.5  
V
V
IC=-1A, IB=-100mA*  
IC=-2A, IB=-200mA*  
Base-Emitter  
Saturation Voltage  
-0.9 -1.25  
-0.9 -1.25  
V
IC=-1A, IB=-100mA*  
Base-Emitter  
Turn-On Voltage  
-0.8 -1  
-0.8 -1  
V
IC=-1A, VCE=-2V*  
3-260  

ZTX753 替代型号

型号 品牌 替代类型 描述 数据表
ZTX753STZ DIODES

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