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Z1160AT-G PDF预览

Z1160AT-G

更新时间: 2024-09-15 15:58:47
品牌 Logo 应用领域
上华 - COMCHIP 测试二极管
页数 文件大小 规格书
6页 113K
描述
Zener Diode,

Z1160AT-G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-PALF-W2Reach Compliance Code:compliant
风险等级:5.72外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:1100 Ω
最大正向电压 (VF):1.2 VJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2膝阻抗最大值:6500 Ω
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:1 W
标称参考电压:160 V最大反向电流:0.1 µA
反向测试电压:121.6 V表面贴装:NO
技术:ZENER端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:5%工作测试电流:1.6 mA
Base Number Matches:1

Z1160AT-G 数据手册

 浏览型号Z1160AT-G的Datasheet PDF文件第2页浏览型号Z1160AT-G的Datasheet PDF文件第3页浏览型号Z1160AT-G的Datasheet PDF文件第4页浏览型号Z1160AT-G的Datasheet PDF文件第5页浏览型号Z1160AT-G的Datasheet PDF文件第6页 
Axial Lead Zener Diode  
1N4728A-G Thru. Z1330A-G  
Zener Voltage: 3.3 to 330 Volts  
DC Power: 1 Watts  
RoHS Device  
DO-41  
Features  
- Glass passivated chip.  
- Low leakage.  
1.000(25.40) Min.  
- Built-in strain relief.  
- Low inductance.  
- High peak reverse power dissipation.  
0.205(5.21)  
0.161(4.10)  
- For use in stabilizing and clipping circuits  
with high power rating.  
0.117(2.97) DIA.  
0.078(2.00) DIA.  
Mechanical data  
1.000(25.40) Min.  
- Case: Molded plastic.  
- Epoxy: UL 94V-0 rate flame retardant.  
0.035(0.90) DIA.  
0.027(0.70) DIA.  
- Terminals: Solderable per MIL-STD-202,  
- method 208 guranteed.  
- Polarity: Color band denotes cathode end.  
- Mounting position: Any.  
Dimensions in inches and (millimeter)  
- Approx. weight: 0.35 grams(approx.).  
Maximum Ratings and Electrical Characteristics  
Ratings at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Value  
Characteristics  
Symbol  
Units  
DC power dissipation at TL=75°C (Note 1)  
PD  
1
W
Maximum forward voltage at IF=200 mA  
VF  
1.2  
V
Maximum thermal resistance junction  
to ambient air (Note 2)  
RΘJA  
TJ  
170  
°C/W  
°C  
Junction temperature range  
Storage temperature range  
-55 to +175  
-55 to +175  
TSTG  
°C  
Notes:  
1. TL= Lead temperature at 3/8” (9.5mm) from body.  
2. Valid provided that leads are kept at ambient temperature at a distance of 10mm from case.  
Company reserves the right to improve product design , functions and reliability without notice.  
QW-BZ007  
REV: E  
Page 1  
Comchip Technology CO., LTD.  

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