XX1010-QT
Doubler
14.625-15.0/29.25-30 GHz
Rev. V3
Features
Functional Block Diagram
Integrated Gain, Doubler and Driver Stages
+4.5 V Single Positive Bias
Integrated Bypassing Capacitor
+20 dBm Output Saturated Power
30 dBc Fundamental Suppression
On-Chip ESD Protection
100% RF, DC and Output Power Testing
Lead-Free 3 mm 16-Lead QFN Package
RoHS* Compliant and 260°C Reflow Compatible
N/C N/C N/C Vd
16
15
14
13
1
2
3
4
12
11
10
9
N/C
N/C
GND
RFIN
GND
X2
RFOUT
N/C
Description
N/C
The XX1010-QT is a 14.625-15.0 / 29.25-30.0 GHz
GaAs MMIC doubler that integrates a gain stage,
passive doubler and driver amplifier onto a single
device. This device has a self-biased architecture
requiring a single positive supply (+4.5V) only and
integrated on-chip bypassing and DC blocking
capacitors eliminating the need for any external
components.
5
6
7
8
N/C N/C N/C N/C
Pin Configuration1
Pin No.
Function
This device uses InGaAs pHEMT device technology,
and is based upon electron beam lithography to
ensure high repeatability and uniformity.
1,4,5,6,7,8
No Connection
Ground
2,11
3
RF Input
The XX1010-QT has integrated ESD structures for
protection and comes in a low cost 3 mm QFN
package.
9,12,14,15,16
No Connection
RF Output
Vd
10
13
The device is well suited for millimeter wave
Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
1. The exposed pad centered on the package bottom must be
connected to RF and DC ground.
Ordering Information
Part Number
XX1010-QT-0G00
XX1010-QT-0G0T
XX1010-QT-EV1
Package
Bulk Quantity
1000 Piece Reel
Evaluation Board
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
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