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XX1007-QT-0G0T PDF预览

XX1007-QT-0G0T

更新时间： 2024-11-24 03:13:27
品牌 Logo 应用领域
MIMIX 射频和微波射频倍频器微波倍频器
页数 文件大小 规格书
6页 339K
描述
13.5-17.0/27.0-34.0 GHz Doubler QFN, 3X3mm

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XX1007-QT-0G0T 技术参数

是否Rohs认证： 符合生命周期：Transferred
Reach Compliance Code：unknown风险等级：5.29
Is Samacsys：N构造：COMPONENT
最大输入功率 (CW)：10 dBmJESD-609代码：e3
最大工作频率：17000 MHz最小工作频率：13500 MHz
射频/微波设备类型：FREQUENCY DOUBLER端子面层：Matte Tin (Sn)
Base Number Matches：1

XX1007-QT-0G0T 数据手册

 浏览型号XX1007-QT-0G0T的Datasheet PDF文件第2页浏览型号XX1007-QT-0G0T的Datasheet PDF文件第3页浏览型号XX1007-QT-0G0T的Datasheet PDF文件第4页浏览型号XX1007-QT-0G0T的Datasheet PDF文件第5页浏览型号XX1007-QT-0G0T的Datasheet PDF文件第6页 
13.5-17.0/27.0-34.0 GHz Doubler  
QFN, 3X3mm  
February 2008 - Rev 06-Feb-08  
X1007-QT  
Features  
Chip Device Layout  
Integrated Gain, Doubler and Driver Stages  
Single Positive Supply, +5V  
Integrated Bypassing Capacitor  
+20.0 dBm Output Saturated Power  
35.0 dBc Fundamental Suppression  
On-Chip ESD Protection  
100% RF, DC and Output Power Testing  
3x3 QFN Package  
RoHS Compliant  
General Description  
Mimix Broadband’s 13.5-17.0 / 27.0-34.0 GHz GaAs MMIC  
doubler integrates a gain stage, passive doubler and driver  
amplifier onto a single device. The XX1007-QT has a  
self-biased architecture requiring a single positive supply  
(+5V) only and integrated on-chip bypassing and DC  
blocking capacitors eliminating the need for any external  
components.This device uses Mimix Broadband’s 0.15um  
GaAs PHEMT device model technology, and is based upon  
electron beam lithography to ensure high repeatability and  
uniformity. XX1007-QT has integrated ESD structures for  
protection and comes in a low cost 3x3mm QFN package.  
The device is well suited for Millimeter wave Point-to-Point  
Radio, LMDS, SATCOM and VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id)  
Gate Bias Voltage (Vg)  
Input Power (RF Pin)  
+6.0 VDC  
300 mA  
+0.3 VDC  
10 dBm  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Table  
1
1
Channel Temperature (Tch) MTTF Table  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Input Frequency Range (fin)  
Output Frequency Range (fout)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Fundamental Suppression  
RF Input Power (RF Pin)  
Output Power at 5.0 dBm Pin (Pout)  
Drain Bias Voltage (Vd)  
Supply Current (Id1,2,3) (Vd=5.0V Typical)  
Units  
GHz  
GHz  
dB  
Min.  
13.5  
27.0  
-
-
-
-
-
-
-
Typ.  
-
-
-8.0  
-10.0  
-35.0  
7.0  
+20.0  
+5.0  
200  
Max.  
17.0  
34.0  
-
-
-
-
dB  
dBc  
dBm  
dBm  
VDC  
mA  
-
+5.5  
240  
Page 1 of 6  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
123456

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