®
XThin LEDs
CxxxXT290-Sxx00-x
Cree’s XThin LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED
chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a
single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and
require a low forward voltage. Cree’s XT™ chips are tested for conformity to optical and electrical specifications
and the ability to withstand 1000V ESD. Applications for XThin include next-generation mobile appliances for use
in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption
are required.
FEATURES
APPLICATIONS
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XThin LED Performance
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SMT Packages
Cellular Phone LCD Backlighting
Digital Camera Flash
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Blue
XT-12™ – 12.0 mW min.
XT-16™ – 16.0 mW min.
XT-18™ – 18.0 mW min.
XT-21™ – 21.0 mW min.
XT-24™ – 24.0 mW min.
Mobile Appliance Key Pads
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White LEDs
Blue LEDs
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LED Video Displays
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Green – 7.0 mW min.
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Low Forward Voltage – 3.2 V Typical at 20 mA
Class 2 ESD Rating
Sn Contact for Low-Temp. Die Attach Methods
Die Attach Options
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Flux Eutectic; Flux & Temperature (-C)
Eutectic; Temperature & Pressure (-D)
CxxxXT290-Sxx00-x Chip Diagram
Top View
Bottom View
Die Cross Section
G•SiC LED Chip
300 x 300 μm
Backside
Contact
Metal
Gold Bond Pad
105 μm Diameter
Cathode (-)
Bottom View for -C
Bottom View for -D
SiC Substrate
t = 115 µm
Anode (+)
Subject to change without notice.
www.cree.com
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