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XR1007_0610

更新时间： 2024-11-09 03:53:07
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页数 文件大小 规格书
8页 444K
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11.0-17.0 GHz GaAs MMIC Receiver

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XR1007_0610 数据手册

 浏览型号XR1007_0610的Datasheet PDF文件第2页浏览型号XR1007_0610的Datasheet PDF文件第3页浏览型号XR1007_0610的Datasheet PDF文件第4页浏览型号XR1007_0610的Datasheet PDF文件第5页浏览型号XR1007_0610的Datasheet PDF文件第6页浏览型号XR1007_0610的Datasheet PDF文件第7页 
11.0-17.0 GHz GaAs MMIC  
Receiver  
October 2006 - Rev 13-Oct-06  
R1007  
Features  
Chip Device Layout  
Fully Integrated Design  
2.2 dB Noise Figure  
13.5 dB Conversion Gain  
20 dB Image Rejection  
+4 dBm IIP3  
+3 dBm LO drive Level  
100% On-Wafer RF, DC and Noise Figure Testing  
100% Visual Inspection to MIL-STD-883 Method 2010  
General Description  
Mimix Broadband’s 11.0-17.0 GHz GaAs MMIC receiver has a noise  
figure of 2.2 dB and 20.0 dB image rejection across the band.This  
device is a three stage LNA followed by an image reject resistive  
pHEMT mixer and includes an integrated LO buffer amplifer.The image  
reject mixer eliminates the need for a bandpass filter after the LNA to  
remove thermal noise at the image frequency. I and Q mixer outputs  
are provided and an external 90 degree hybrid is required to select the  
desired sideband.This MMIC uses Mimix Broadband’s 0.15 µm GaAs  
PHEMT device model technology, and is based upon electron beam  
lithography to ensure high repeatability and uniformity.The chip has  
surface passivation to protect and provide a rugged part with backside  
via holes and gold metallization to allow either a conductive epoxy or  
eutectic solder die attach process.This device is well suited for  
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT  
applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
+6.0 VDC  
Supply Current (Id1), (Id3)  
Gate Bias Voltage (Vg)  
250, 200 mA  
+0.3 VDC  
Input Power (RF Pin)  
+17 dBm  
-65 to +165 OC  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
3
-55 to MTTF Table  
3
MTTF Table  
(3) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25o C)  
Parameter  
Units  
GHz  
GHz  
GHz  
dB  
Min.  
11.0  
9.0  
DC  
Typ.  
-
-
Max.  
17.0  
19.0  
TBD  
-
-
-
-
3.0  
-
-
+5.0  
+5.0  
+0.1  
+0.1  
+0.1  
120  
150  
Frequency Range (RF)  
Frequency Range (LO)  
Frequency Range (IF)  
Input Return Loss RF (S11)  
Small Signal Conversion Gain RF/IF (S21)2  
LO Input Drive (PLO)  
2.0  
-
15.0  
13.5  
+3.0  
20.0  
2.2  
40.0/40.0  
+4.0  
+4.0  
+4.0  
-0.3  
-0.1  
-0.5  
80  
dB  
10.0  
-
15.0  
-
-
-
-
-
-1.2  
-1.2  
-1.2  
-
dBm  
dBc  
dB  
Image Rejection2  
Noise Figure (NF)2  
Isolation LO/RF  
dB  
1
Input Third Order Intercept (IIP3)  
dBm  
VDC  
VDC  
VDC  
VDC  
VDC  
mA  
Drain Bias Voltage (Vd1)  
Drain Bias Voltage (Vd3)  
Gate Bias Voltage (Vg1,2)  
Gate Bias Voltage (Vg3)  
Gate Bias Voltage (Vg4) Mixer, Doubler  
Supply Current (Id1) (Vd1=3.0,Vg=-0.3V Typical)  
Supply Current (Id3) (Vd3=5.0V,Vg=-0.1V Typical)  
-
100  
mA  
(1) Measured using constant current.  
(2) Guaranteed specifications from 12 to 15 GHz.  
Page 1 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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