11.0-17.0 GHz GaAs MMIC
Receiver
October 2008 - Rev 13-Oct-08
R1007-BD
Features
Chip Device Layout
Fully Integrated Design
2.2 dB Noise Figure
13.5 dB Conversion Gain
20 dB Image Rejection
+4 dBm IIP3
+3 dBm LO drive Level
100% On-Wafer RF, DC and Noise Figure Testing
100% Commercial-Level Visual Inspection Using
Mil-Std-883 Method 2010
General Description
Mimix Broadband’s 11.0-17.0 GHz GaAs MMIC receiver has a noise
figure of 2.2 dB and 20.0 dB image rejection across the band.This
device is a three stage LNA followed by an image reject resistive
pHEMT mixer and includes an integrated LO buffer amplifer.The image
reject mixer eliminates the need for a bandpass filter after the LNA to
remove thermal noise at the image frequency. I and Q mixer outputs
are provided and an external 90 degree hybrid is required to select the
desired sideband.This MMIC uses Mimix Broadband’s GaAs PHEMT
device model technology, and is based upon electron beam
lithography to ensure high repeatability and uniformity.The chip has
surface passivation to protect and provide a rugged part with backside
via holes and gold metallization to allow either a conductive epoxy or
eutectic solder die attach process.This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
+6.0 VDC
Supply Current (Id1), (Id3)
Gate Bias Voltage (Vg)
250, 200 mA
+0.3 VDC
Input Power (RF Pin)
+17 dBm
-65 to +165 OC
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
3
-55 to MTTF Table
3
MTTF Table
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (AmbientTemperatureT = 25o C)
Parameter
Units
GHz
GHz
GHz
dB
Min.
11.0
9.0
DC
Typ.
-
-
Max.
17.0
19.0
TBD
-
-
-
-
3.0
-
-
+5.0
+5.0
+0.1
+0.1
+0.1
120
150
Frequency Range (RF)
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21)2
LO Input Drive (PLO)
2.0
-
15.0
13.5
+3.0
20.0
2.2
40.0/40.0
+4.0
+4.0
+4.0
-0.3
-0.1
-0.5
80
dB
10.0
-
15.0
-
-
-
-
-
-1.2
-1.2
-1.2
-
dBm
dBc
dB
Image Rejection2
Noise Figure (NF)2
Isolation LO/RF
dB
1
Input Third Order Intercept (IIP3)
dBm
VDC
VDC
VDC
VDC
VDC
mA
Drain Bias Voltage (Vd1)
Drain Bias Voltage (Vd3)
Gate Bias Voltage (Vg1,2)
Gate Bias Voltage (Vg3)
Gate Bias Voltage (Vg4) Mixer, Doubler
Supply Current (Id1) (Vd1=3.0,Vg=-0.3V Typical)
Supply Current (Id3) (Vd3=5.0V,Vg=-0.1V Typical)
-
100
mA
(1) Measured using constant current.
(2) Guaranteed specifications from 12 to 15 GHz.
Page 1 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5秒后页面跳转
STM32H743技术深度剖析与应用案例探索
LM321中文资料解析：引脚功能介绍、技术特点、技术特性分析
74HC14芯片资料介绍：性能特性分析、引脚介绍
LM1875芯片手册：功放参数分析、引脚说明、电路设计要点
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
