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XP4113 PDF预览

XP4113

更新时间: 2024-11-28 22:11:19
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松下 - PANASONIC 晶体晶体管
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2页 36K
描述
Silicon PNP epitaxial planer transistor

XP4113 数据手册

 浏览型号XP4113的Datasheet PDF文件第2页 
Composite Transistors  
XP4113  
Silicon PNP epitaxial planer transistor  
Unit: mm  
For switching/digital circuits  
2.1±0.1  
0.425  
1.25±0.1  
0.425  
1
6
Features  
2
3
5
4
Two elements incorporated into one package.  
(Transistors with built-in resistor)  
Reduction of the mounting area and assembly cost by one half.  
Basic Part Number of Element  
UN1113 × 2 elements  
0.2±0.1  
1 : Emitter (Tr1)  
2 : Base (Tr1)  
3 : Collector (Tr2) 6 : Collector (Tr1)  
EIAJ : SC–88  
4 : Emitter (Tr2)  
5 : Base (Tr2)  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
–50  
Unit  
V
S–Mini Type Package (6–pin)  
Collector to base voltage  
Collector to emitter voltage  
Collector current  
Total power dissipation  
Rating  
of  
element  
–50  
V
Marking Symbol: 6S  
Internal Connection  
–100  
mA  
mW  
˚C  
PT  
150  
Overall Junction temperature  
Storage temperature  
Tj  
150  
Tr1  
1
2
3
6
5
4
Tstg  
–55 to +150  
˚C  
Tr2  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
Conditions  
min  
typ  
max  
Unit  
V
Collector to base voltage  
IC = –10µA, IE = 0  
–50  
–50  
Collector to emitter voltage  
VCEO  
ICBO  
ICEO  
IEBO  
hFE  
IC = –2mA, IB = 0  
V
VCB = –50V, IE = 0  
– 0.1  
– 0.5  
– 0.1  
µA  
µA  
mA  
Collector cutoff current  
VCE = –50V, IB = 0  
Emitter cutoff current  
VEB = –6V, IC = 0  
Forward current transfer ratio  
VCE = –10V, IC = –5mA  
IC = –10mA, IB = – 0.3mA  
VCC = –5V, VB = – 0.5V, RL = 1kΩ  
VCC = –5V, VB = –3.5V, RL = 1kΩ  
VCB = –10V, IE = 1mA, f = 200MHz  
80  
Collector to emitter saturation voltage VCE(sat)  
– 0.25  
– 0.2  
V
V
Output voltage high level  
Output voltage low level  
Transition frequency  
Input resistance  
VOH  
VOL  
fT  
–4.9  
V
80  
47  
MHz  
kΩ  
R1  
–30%  
0.8  
+30%  
1.2  
Resistance ratio  
R1/R2  
1.0  
1

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