Datasheet > XN04130

XN04130

更新时间： 2024-09-29 23:33:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	65K
描述
TRANSISTOR \| 15V V(BR)CEO \| 500MA I(C) \| SC-74

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

XN04130 数据手册

Composite Transistors

XN04130 (XN4130)

Silicon PNP epitaxial planer transistor

Unit: mm

2.8⁺^–0⁰^.^.³²

For amplification of low frequency output

0.65 0.15

1.5⁺^–0⁰^.^.⁰²⁵⁵

0.65 0.15

Features

Two elements incorporated into one package.

(Transistors with built-in resistor)

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

UNR1130(UN1130) × 2 elements

0.1 to 0.3

0.4 0.2

1 : Collector (Tr1)

2 : Base (Tr2)

3 : Emitter (Tr2)

4 : Collector (Tr2)

5 : Base (Tr1)

6 : Emitter (Tr1)

EIAJ : SC–74

Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

–15

Unit

Mini Type Package (6–pin)

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Peak collector current

Total power dissipation

–15

Rating

Marking Symbol: OF

Internal Connection

–7

element

– 0.5

–1

I_CP

Tr1

P_T

300

˚C

Overall Junction temperature

Storage temperature

T_j

150

T_stg

–55 to +150

Tr2

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

V_CBO

Conditions

min

–15

–7

typ

max

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector cutoff current

I_C= –10µA, I_E= 0

V_CEO

V_EBO

I_CBO

h_FE1

I_C= –1mA, I_B= 0

I_E= –1mA, I_C= 0

V_CB= –10V, I_E= 0

– 0.1

280

µA

V_CE= –2V, I_C= –500mA*

V_CE= –2V, I_C= –1A*

Forward current transfer ratio

h_FE2

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= –300mA, I_B= –6mA

V_CB= –10V, I_E= 50mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

– 0.2

– 0.9

130

– 0.3

–1.3

Transition frequency

f_T

MHz

Collector output capacitance

Base to emitter resistance

C_ob

R_BE

–30%

+30%

kΩ

*Pulse measurement

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

中文翻译

下载PDF

与XN04130相关器件

型号	品牌	获取价格	描述	数据表
XN04130(XN4130)	ETC	获取价格	複合デバイス－複合トランジスタ
XN04130\|XN4130	ETC	获取价格	Composite Device - Composite Transistors
XN04210	PANASONIC	获取价格	Silicon NPN epitaxial planer transistor
XN04210(XN4210)	ETC	获取价格	複合デバイス－複合トランジスタ
XN04210G	PANASONIC	获取价格	暂无描述
XN04211	PANASONIC	获取价格	For switching/digital circuits
XN04211(XN4211)	ETC	获取价格	Composite Device - Composite Transistors
XN04211G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS CO
XN04212	PANASONIC	获取价格	Silicon NPN epitaxial planer transistor
XN04212(XN4212)	ETC	获取价格	複合デバイス－複合トランジスタ