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XN04210 PDF预览

XN04210

更新时间: 2024-09-30 03:14:03
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
3页 84K
描述
Silicon NPN epitaxial planer transistor

XN04210 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-74包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84Is Samacsys:N
其他特性:BUILT IN BIAS RESISTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):160JESD-30 代码:R-PDSO-G6
JESD-609代码:e6湿度敏感等级:1
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

XN04210 数据手册

 浏览型号XN04210的Datasheet PDF文件第2页浏览型号XN04210的Datasheet PDF文件第3页 
Composite Transistors  
XN04210 (XN4210)  
Silicon NPN epitaxial planer transistor  
Unit: mm  
+0.20  
–0.05  
1.9 0.1  
(0.95) (0.95)  
2.90  
+0.10  
0.16  
–0.06  
For switching/digital circuits  
4
3
5
6
Features  
I
G
Two elements incorporated into one package.  
(Transistors with built-in resistor)  
Reduction of the mounting area and assembly cost by one half.  
2
1
+0.10  
–0.05  
0.30  
0.50  
G
+0.10  
–0.05  
10˚  
Basic Part Number of Element  
UNR1210(UN1210) × 2 elements  
I
G
1 : Collector (Tr1)  
2 : Base (Tr2)  
3 : Emitter (Tr2)  
4 : Collector (Tr2)  
5 : Base (Tr1)  
6 : Emitter (Tr1)  
EIAJ : SC–74  
Absolute Maximum Ratings (Ta=25˚C)  
I
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
Unit  
V
Mini6-G1 Package  
Collector to base voltage  
Collector to emitter voltage  
Collector current  
Total power dissipation  
50  
50  
Rating  
of  
element  
V
Marking Symbol: 8Z  
Internal Connection  
100  
mA  
mW  
˚C  
PT  
300  
Overall Junction temperature  
Storage temperature  
Tj  
150  
Tr1  
6
1
2
3
Tstg  
–55 to +150  
˚C  
5
4
Tr2  
Electrical Characteristics (Ta=25˚C)  
I
Parameter  
Symbol  
VCBO  
Conditions  
min  
50  
typ  
max  
Unit  
V
Collector to base voltage  
IC = 10µA, IE = 0  
Collector to emitter voltage  
VCEO  
ICBO  
ICEO  
IEBO  
hFE  
IC = 2mA, IB = 0  
50  
V
VCB = 50V, IE = 0  
0.1  
0.5  
µA  
µA  
mA  
Collector cutoff current  
VCE = 50V, IB = 0  
Emitter cutoff current  
VEB = 6V, IC = 0  
0.01  
460  
0.25  
Forward current transfer ratio  
VCE = 10V, IC = 5mA  
160  
4.9  
Collector to emitter saturation voltage VCE(sat)  
IC = 10mA, IB = 0.3mA  
VCC = 5V, VB = 0.5V, RL = 1kΩ  
VCC = 5V, VB = 2.5V, RL = 1kΩ  
VCB = 10V, IE = –2mA, f = 200MHz  
V
V
Output voltage high level  
Output voltage low level  
Transition frequency  
Input resistance  
VOH  
VOL  
fT  
0.2  
V
150  
47  
MHz  
kΩ  
R1  
–30%  
+30%  
Note) The Part number in the Parenthesis shows conventional part number.  
1

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