Datasheet > XN04215(XN4215)

XN04215(XN4215)

更新时间： 2024-09-29 23:33:23

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描述
複合デバイス－複合トランジスタ

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数据手册

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XN04215(XN4215) 数据手册

Composite Transistors

XN04215 (XN4215)

Silicon NPN epitaxial planer transistor

Unit: mm

2.8⁺^–0⁰^.^.³²

For switching/digital circuits

0.65 0.15

1.5⁺^–0⁰^.^.⁰²⁵⁵

0.65 0.15

Features

Two elements incorporated into one package.

(Transistors with built-in resistor)

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

UNR1215(UN1215) × 2 elements

0.1 to 0.3

0.4 0.2

1 : Collector (Tr1)

2 : Base (Tr2)

3 : Emitter (Tr2)

4 : Collector (Tr2)

5 : Base (Tr1)

6 : Emitter (Tr1)

EIAJ : SC–74

Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

V_CBO

V_CEO

I_C

Ratings

Unit

Mini Type Package (6–pin)

Collector to base voltage

Collector to emitter voltage

Collector current

Total power dissipation

Rating

Marking Symbol: 8T

Internal Connection

element

100

˚C

P_T

300

Overall Junction temperature

Storage temperature

T_j

150

Tr1

T_stg

–55 to +150

˚C

Tr2

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

V_CBO

Conditions

min

typ

max

Unit

Collector to base voltage

I_C= 10µA, I_E= 0

Collector to emitter voltage

V_CEO

I_CBO

I_CEO

I_EBO

h_FE

I_C= 2mA, I_B= 0

V_CB= 50V, I_E= 0

0.1

0.5

µA

Collector cutoff current

V_CE= 50V, I_B= 0

Emitter cutoff current

V_EB= 6V, I_C= 0

0.01

460

0.25

Forward current transfer ratio

V_CE= 10V, I_C= 5mA

160

4.9

Collector to emitter saturation voltage V_CE(sat)

I_C= 10mA, I_B= 0.3mA

V_CC= 5V, V_B= 0.5V, R_L= 1kΩ

V_CC= 5V, V_B= 2.5V, R_L= 1kΩ

V_CB= 10V, I_E= –2mA, f = 200MHz

0.09

Output voltage high level

Output voltage low level

Transition frequency

Input resistance

V_OH

V_OL

f_T

0.2

150

MHz

kΩ

R₁

–30%

+30%

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

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