Datasheet > XN04312(XN4312)

XN04312(XN4312)

更新时间： 2024-09-29 23:33:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	104K
描述
Composite Device - Composite Transistors

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数据手册

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XN04312(XN4312) 数据手册

Composite Transistors

XN04312 (XN4312)

Silicon NPN epitaxial planer transistor (Tr1)

Silicon PNP epitaxial planer transistor (Tr2)

Unit: mm

+0.20

–0.05

1.9 0.1

(0.95) (0.95)

2.90

+0.10

0.16

–0.06

For switching/digital circuits

Features

Two elements incorporated into one package.

(Transistors with built-in resistor)

Reduction of the mounting area and assembly cost by one half.

+0.10

–0.05

0.30

0.50

+0.10

–0.05

10˚

Basic Part Number of Element

UNR1212(UN1212) + UNR1112(UN1112)

1 : Collector (Tr1)

2 : Base (Tr2)

3 : Emitter (Tr2)

4 : Collector (Tr2)

5 : Base (Tr1)

6 : Emitter (Tr1)

EIAJ : SC–74

Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

V_CBO

V_CEO

I_C

Ratings

Unit

Mini6-G1 Package

Collector to base voltage

Collector to emitter voltage

Collector current

Collector to base voltage

Collector to emitter voltage

Collector current

Total power dissipation

Tr1

Tr2

Marking Symbol: 7T

Internal Connection

100

V_CBO

V_CEO

I_C

–50

Tr1

–100

300

˚C

P_T

Overall Junction temperature

Storage temperature

T_j

150

Tr2

T_stg

–55 to +150

˚C

Note) The Part number in the Parenthesis shows conventional part number.

12 3 4 5

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与XN04312(XN4312)相关器件

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XN04314	PANASONIC	获取价格	Silicon NPN(PNP) epitaxial planer transistor
XN04314(XN4314)	ETC	获取价格	複合デバイス－複合トランジスタ
XN04315	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SC-74
XN04315(XN4315)	ETC	获取价格	複合デバイス－複合トランジスタ
XN04315G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
XN04316	PANASONIC	获取价格	Silicon NPN(PNP) epitaxial planer transistor
XN04316(XN4316)	ETC	获取价格	複合デバイス－複合トランジスタ
XN04316G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
XN0431L	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SC-74