Datasheet > XN04402(XN4402)

XN04402(XN4402)

更新时间： 2024-09-29 23:33:23

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其他 - ETC		/
页数	文件大小	规格书
3页	66K
描述
複合デバイス－複合トランジスタ

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中文翻译

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数据手册

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XN04402(XN4402) 数据手册

Composite Transistors

XN04402 (XN4402)

Silicon PNP epitaxial planer transistor

Unit: mm

2.8⁺^–0⁰^.^.³²

For general amplification

0.65 0.15

1.5⁺^–0⁰^.^.⁰²⁵⁵

0.65 0.15

Features

Two elements incorporated into one package.

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

2SB0710(2SB710) × 2 elements

0.1 to 0.3

0.4 0.2

Absolute Maximum Ratings (Ta=25˚C)

1 : Collector (Tr1)

2 : Base (Tr2)

3 : Emitter (Tr2)

4 : Collector (Tr2)

5 : Base (Tr1)

6 : Emitter (Tr1)

EIAJ : SC–74

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

–60

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Peak collector current

Total power dissipation

Mini Type Package (6–pin)

–50

Rating

–5

Marking Symbol: OH

Internal Connection

element

– 0.5

–1

I_CP

P_T

300

˚C

Tr1

Overall Junction temperature

Storage temperature

T_j

150

T_stg

–55 to +150

Tr2

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

V_CBO

Conditions

min

–60

–50

–5

typ

max

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector cutoff current

I_C= –10µA, I_E= 0

V_CEO

V_EBO

I_CBO

h_FE1

I_C= –2mA, I_B= 0

I_E= –10µA, I_C= 0

V_CB= –20V, I_E= 0

– 0.1

340

µA

V_CE= –10V, I_C= –150mA*

V_CE= –10V, I_C= –500mA*

I_C= –300mA, I_B= –30mA*

V_CB= –10V, I_E= 50mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

Forward current transfer ratio

h_FE2

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

– 0.35

–1.1

200

– 0.6

–1.5

Transition frequency

f_T

MHz

Collector output capacitance

C_ob

*Pulse measurement

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

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