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X28C256KI-15 PDF预览

X28C256KI-15

更新时间: 2024-11-06 03:25:19
品牌 Logo 应用领域
XICOR 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
24页 548K
描述
EEPROM, 32KX8, 150ns, Parallel, CMOS, CPGA28, CERAMIC, PGA-28

X28C256KI-15 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:CERAMIC, PGA-28Reach Compliance Code:unknown
风险等级:5.39最长访问时间:150 ns
其他特性:PAGE WRITE命令用户界面:NO
数据轮询:YES耐久性:10000 Write/Erase Cycles
JESD-30 代码:R-CPGA-P28JESD-609代码:e0
长度:16.51 mm内存密度:262144 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:PGA
封装等效代码:PGA28,5X6封装形状:RECTANGULAR
封装形式:GRID ARRAY页面大小:64 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:4.62 mm
最大待机电流:0.0005 A子类别:EEPROMs
最大压摆率:0.06 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子节距:2.54 mm
端子位置:PERPENDICULAR处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES宽度:14 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

X28C256KI-15 数据手册

 浏览型号X28C256KI-15的Datasheet PDF文件第2页浏览型号X28C256KI-15的Datasheet PDF文件第3页浏览型号X28C256KI-15的Datasheet PDF文件第4页浏览型号X28C256KI-15的Datasheet PDF文件第5页浏览型号X28C256KI-15的Datasheet PDF文件第6页浏览型号X28C256KI-15的Datasheet PDF文件第7页 
256K  
X28C256  
32K x 8 Bit  
5 Volt, Byte Alterable E2PROM  
FEATURES  
DESCRIPTION  
2
Access Time: 150ns  
Simple Byte and Page Write  
— Single 5V Supply  
—No External High Voltages or V Control  
Circuits  
— Self-Timed  
The X28C256 is an 32K x 8 E PROM, fabricated with  
Xicor’s proprietary, high performance, floating gate  
CMOS technology. Like all Xicor programmable non-  
volatile memories the X28C256 is a 5V only device. The  
X28C256 features the JEDEC approved pinout for byte-  
widememories,compatiblewithindustrystandardRAMs.  
PP  
No Erase Before Write  
No Complex Programming Algorithms  
—No Overerase Problem  
Low Power CMOS:  
The X28C256 supports a 64-byte page write operation,  
effectively providing a 78µs/byte write cycle and en-  
abling the entire memory to be typically written in less  
than 2.5 seconds. The X28C256 also features DATA  
and Toggle Bit Polling, a system software support  
scheme used to indicate the early completion of a write  
cycle. In addition, the X28C256 includes a user-optional  
software data protection mode that further enhances  
Xicor’s hardware write protect capability.  
—Active: 60mA  
—Standby: 200µA  
Software Data Protection  
— Protects Data Against System Level  
Inadvertent Writes  
High Speed Page Write Capability  
Highly Reliable Direct Write Cell  
2
Xicor E PROMs are designed and tested for applica-  
— Endurance: 100,000 Write Cycles  
— Data Retention: 100 Years  
Early End of Write Detection  
DATA Polling  
tions requiring extended endurance. Inherent data re-  
tention is greater than 100 years.  
—Toggle Bit Polling  
PIN CONFIGURATION  
LCC  
PLCC  
PLASTIC DIP  
CERDIP  
FLAT PACK  
SOIC  
TSOP  
A
A
A
I/O  
I/O  
I/O  
1
2
3
4
5
6
7
8
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
A
A
A
A
A
A
A
NC  
V
NC  
2
1
0
0
1
2
3
4
5
6
7
12  
14  
A14  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
V
CC  
4
3
2
1
32 31 30  
A
2
WE  
12  
A
A
A
A
A
A
A
5
6
7
8
9
29  
28  
27  
26  
25  
24  
23  
22  
21  
A
A
A
6
5
4
3
2
1
0
8
A
3
A
7
13  
9
A
6
4
A
8
NC  
11  
A
5
A
9
A
5
V
SS  
NC  
I/O  
I/O  
I/O  
I/O  
I/O  
NC  
OE  
A
X28C256  
A
4
6
9
11  
X28C256  
CC  
10  
11  
12  
13  
14  
15  
16  
A
7
OE  
3
4
5
6
7
3
X28C256  
WE  
10  
11  
12  
13  
10  
A
2
8
A
10  
A
A
A
A
13  
8
9
CE  
I/O  
A
9
CE  
1
NC  
7
A
0
10  
11  
12  
13  
14  
I/O  
7
I/O  
CE  
11  
I/O  
I/O  
0
6
A
I/O  
OE  
10  
0
6
14 15 16 17 18 19 20  
I/O  
1
I/O  
5
I/0  
I/O  
3855 ILL F23  
2
4
V
I/O  
3
SS  
3855 FHD F03  
3855 FHD F02  
© Xicor, Inc. 1991, 1995 Patents Pending  
3855-2.0 8/19/98 T3/C0/D0 RZ  
Characteristics subject to change without notice  
1

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