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X20C16PMB-35 PDF预览

X20C16PMB-35

更新时间: 2024-11-12 22:41:23
品牌 Logo 应用领域
XICOR 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
21页 96K
描述
High Speed AUTOSTORE⑩ NOVRAM

X20C16PMB-35 技术参数

生命周期:Obsolete包装说明:PLASTIC, DIP-28
Reach Compliance Code:unknown风险等级:5.64
Is Samacsys:N最长访问时间:35 ns
其他特性:DATA RETENTION 100 YEARS MINIMUMJESD-30 代码:R-PDIP-T28
长度:36.32 mm内存密度:16384 bit
内存集成电路类型:NON-VOLATILE SRAM内存宽度:8
功能数量:1端口数量:1
端子数量:28字数:2048 words
字数代码:2000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:2KX8输出特性:3-STATE
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:4.82 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL宽度:15.24 mm
Base Number Matches:1

X20C16PMB-35 数据手册

 浏览型号X20C16PMB-35的Datasheet PDF文件第2页浏览型号X20C16PMB-35的Datasheet PDF文件第3页浏览型号X20C16PMB-35的Datasheet PDF文件第4页浏览型号X20C16PMB-35的Datasheet PDF文件第5页浏览型号X20C16PMB-35的Datasheet PDF文件第6页浏览型号X20C16PMB-35的Datasheet PDF文件第7页 
APPLICATION NOTE  
A V A I L A B L E  
AN56  
16K  
X20C16  
2K x 8 Bit  
High Speed AUTOSTORE™ NOVRAM  
FEATURES  
DESCRIPTION  
Fast Access Time: 35ns, 45ns, 55ns  
High Reliability  
TheXicorX20C16isa2Kx8NOVRAMfeaturingahigh-  
speed static RAM overlaid bit-for-bit with a nonvolatile  
electrically erasable PROM (E2PROM) and the  
AUTOSTORE feature which automatically saves the  
RAMcontentstoE2PROMatpower-down. TheX20C16  
isfabricatedwithadvancedCMOSfloatinggatetechnol-  
ogy to achieve high speed with low power and wide  
power-supply margin. The X20C16 features a compat-  
ible JEDEC approved pinout for byte-wide memories,  
for industry standard RAMs, ROMs, EPROMs, and  
E2PROMs.  
Endurance: 1,000,000 Nonvolatile Store  
Operations  
Retention: 100 Years Minimum  
AUTOSTORE™ NOVRAM  
Automatically Stores RAM Data Into the  
E2PROM Array When VCC Low Threshold is  
Detected  
—User Enabled Option  
Open Drain AUTOSTORE Status Output Pin  
Power-on Recall  
The NOVRAM design allows data to be easily trans-  
ferred from RAM to E2PROM (store) and E2PROM to  
RAM(recall). Thestoreoperationiscompletedin5msor  
less and the recall operation is completed in 10µs or  
less. An automatic array recall operation reloads the  
contents of the E2PROM into RAM upon power-up.  
—E2PROM Data Automatically Recalled Into  
RAM Upon Power-up  
Software Data Protection  
Locks Out Inadvertent Store Operations  
Low Power CMOS  
Standby: 250µA  
Infinite E2PROM Array Recall, and RAM Read  
and Write Cycles  
Xicor NOVRAMS are designed for unlimited write  
operations to RAM, either from the host or recalls from  
E2PROM, andaminimum1,000,000storeoperationsto  
the E2PROM. Data retention is specified to be greater  
than 100 years.  
PIN CONFIGURATION  
PLASTIC  
CERDIP  
TSOP  
NE  
NC  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
V
CC  
2
WE  
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
3
AS  
4
A
8
A
9
LCC  
PLCC  
5
SOIC  
6
NC  
7
OE  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
NC  
OE  
A
10  
CE  
X20C16  
8
A
X20C16  
10  
2
4
3
2
1
32 31 30  
29  
9
CE  
3
A
9
I/O  
7
A
A
A
A
A
A
A
5
6
7
8
9
A
A
10  
11  
12  
13  
14  
I/O  
7
I/O  
6
I/O  
5
I/O  
4
6
5
4
3
2
1
0
8
9
4
A
I/O  
I/O  
I/O  
I/O  
V
8
6
5
4
3
28  
27  
26  
25  
24  
23  
22  
21  
I/O  
0
1
2
5
AS  
NC  
NC  
OE  
A
I/O  
I/O  
V
6
WE  
7
X20C16  
(TOP VIEW)  
V
CC  
NE  
X20C16  
I/O  
3
SS  
8
SS  
10  
11  
12  
13  
10  
3826 FHD F02  
9
NC  
I/O  
2
1
0
CE  
10  
11  
12  
13  
14  
A
7
I/O  
I/O  
NC  
I/O  
7
A
3826 ILL F17.2  
6
I/O  
I/O  
0
6
A
5
A
0
14 15 16 17 18 19 20  
A
A
4
1
3826 FHD F15.1  
A
3
A
2
3826 FHD F03  
AUTOSTORE™ NOVRAM is a trademark of Xicor, Inc.  
©Xicor, Inc. 1991, 1995, 1996 Patents Pending  
3826-2.9 7/31/97 T4/C0/D0 SH  
Characteristics subject to change without notice  
1

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