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WTR10P680L PDF预览

WTR10P680L

更新时间: 2024-11-30 14:54:19
品牌 Logo 应用领域
先科 - SWST 晶体
页数 文件大小 规格书
7页 531K
描述
功率金氧半电晶体

WTR10P680L 数据手册

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WTR10P680L-HAF  
P-Channel Enhancement Mode MOSFET  
Features  
Drain  
• Advanced trench cell design  
• High speed switch  
• Halogen and Antimony Free(HAF),  
Gate  
RoHS compliant  
Applications  
Source  
1.Gate 2.Drain 3.Source  
TO-252 Plastic Package  
• Portable appliances  
• Battery management  
Key Parameters  
Parameter  
-BVDSS  
Value  
100  
Unit  
V
68 @ -VGS = 10 V  
78 @ -VGS = 4.5 V  
1.3  
RDS(ON) Max  
mΩ  
-VGS(th) typ  
Qg typ  
V
71 @ -VGS = 10 V  
nC  
Absolute Maximum Ratings (at Ta = 25unless otherwise specified)  
Parameter  
Symbol  
Value  
100  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
-VDS  
VGS  
± 20  
V
Tc = 25℃  
Tc = 100℃  
22  
13  
Drain Current  
-ID  
A
Peak Drain Current 1)  
Avalanche Current  
-IDM  
-IAS  
80  
18.2  
A
A
Single Pulse Avalanche Energy 2)  
Power Dissipation  
EAS  
82.8  
mJ  
W
PD  
64.9  
Tc = 25℃  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to + 150  
Thermal Characteristics  
Parameter  
Symbol  
RθJC  
Max.  
1.9  
Unit  
Thermal Resistance from Junction to Case  
/W  
/W  
Thermal Resistance from Junction to Ambient 3)  
1) Pulse Test: Pulse Width 100 μs, Duty Cycle 2%,Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.  
2) Limited by TJ(MAX), starting TJ = 25°C, L = 0.5 mH, Rg = 25 Ω, -IAS = 18.2 A, VGS = 10 V.  
RθJA  
35  
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.  
®
1 / 7  
Dated: 13/09/2022 Rev: 02  

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