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WTS772 PDF预览

WTS772

更新时间: 2024-11-29 03:15:59
品牌 Logo 应用领域
WEITRON 晶体晶体管
页数 文件大小 规格书
5页 232K
描述
PNP/NPN Epitaxial Planar Transistors

WTS772 数据手册

 浏览型号WTS772的Datasheet PDF文件第2页浏览型号WTS772的Datasheet PDF文件第3页浏览型号WTS772的Datasheet PDF文件第4页浏览型号WTS772的Datasheet PDF文件第5页 
WTS772  
WTS882  
PNP/NPN Epitaxial Planar Transistors  
TO-92  
1. EMITTER  
2. COLLECTOR  
3. BASE  
1
2
3
ABSOLUTE MAXIMUM RATINGS  
(Ta=25 C)  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base VOltage  
Collector Current (DC)  
Symbol  
PNP/WTS772  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
NPN/WTS882  
V
30  
40  
5.0  
3.0  
-30  
-40  
-5.0  
-3.0  
CEO  
V
V
CBO  
EBO  
I
C(DC)  
Collector Current (Pulse)(1)  
(Pulse)  
-7.0  
-0.6  
Adc  
Adc  
I
C
7.0  
0.6  
I
(Pulse)  
Base Current  
B
P
Total Device Dissipation T =25 C  
W
C
A
D
0.625  
150  
Junction Temperature  
Storage, Temperature  
T
j
Tstg  
C
-55 to +150  
Device Marking  
WTS772=B772 , WTS882=D882  
ELECTRICAL CHARACTERISTICS  
Characteristics  
Symbol  
Min  
Max  
Unit  
-
Collector-Emitter Breakdown Voltage (I = -10/10 mAdc, I =0)  
V
-30/30  
Vdc  
C
B
(BR)CEO  
-
-
-40/40  
Vdc  
Collector-Base Breakdown Voltage (I = -100/100 µAdc, I =0)  
V
V
C
E
(BR)CBO  
Vdc  
-5.0/5.0  
Emitter-Base Breakdown Voltage (I = -100/100 µAdc, I =0)  
(BR)EBO  
E
C
uAdc  
I
I
CE0  
-1.0/1.0  
-1.0/1.0  
Collector Cutoff Current (V = -30/30 Vdc, I =0)  
-
-
CE  
B
uAdc  
Collector Cutoff Current (V = -40/40 Vdc, I =0)  
CB  
CBO  
EBO  
E
-
I
-1.0/1.0 uAdc  
d
Emitter Cutoff Current (V = -6.0/6.0V c, I =0)  
EB  
C
NOTE: 1.PW 350us, duty cycle 2%  
WEITRON  
http://www.weitron.com.tw  

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