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WS512K32V-120G2TCA PDF预览

WS512K32V-120G2TCA

更新时间: 2024-01-26 18:23:02
品牌 Logo 应用领域
美高森美 - MICROSEMI 静态存储器内存集成电路
页数 文件大小 规格书
8页 212K
描述
Standard SRAM, 512KX32, 120ns, CMOS, CQFP68, CERAMIC, QFP-68

WS512K32V-120G2TCA 技术参数

生命周期:Transferred包装说明:CERAMIC, QFP-68
Reach Compliance Code:unknown风险等级:5.55
Is Samacsys:N最长访问时间:120 ns
JESD-30 代码:S-CQFP-G68内存密度:16777216 bit
内存集成电路类型:STANDARD SRAM内存宽度:32
功能数量:1端子数量:68
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX32
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:FLATPACK并行/串行:PARALLEL
认证状态:Not Qualified最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子位置:QUADBase Number Matches:1

WS512K32V-120G2TCA 数据手册

 浏览型号WS512K32V-120G2TCA的Datasheet PDF文件第2页浏览型号WS512K32V-120G2TCA的Datasheet PDF文件第3页浏览型号WS512K32V-120G2TCA的Datasheet PDF文件第4页浏览型号WS512K32V-120G2TCA的Datasheet PDF文件第5页浏览型号WS512K32V-120G2TCA的Datasheet PDF文件第6页浏览型号WS512K32V-120G2TCA的Datasheet PDF文件第7页 
WS512K32V-XXX  
HI-RELIABILITY PRODUCT  
512Kx32 SRAM 3.3V MODULE ADVANCED*  
FEATURES  
Access Times of 70, 85, 100, 120ns  
Low Voltage  
Packaging  
• 3.3V ±10% Power Supply  
Low Power CMOS  
• 66-pin, PGA Type, 1.185 inch square, Hermetic  
Ceramic HIP (Package 401)  
Built-in Decoupling Caps and Multiple Ground Pins for Low  
• 68 lead, Hermetic CQFP (G2T), 22.4mm (0.880 inch) square  
4.57mm (0.180 inch) high (Package 509). Designed to fit  
JEDEC 68 lead 0.990" CQFJ footprint.  
Noise Operation  
Weight  
WS512K32V-XG2TX - 8 grams typical  
WS512K32V-XHX - 13 grams typical  
Organized as 512Kx32, User Configurable as 1024Kx16 or  
2Mx8  
*
This data sheet describes a product that may or may not be under development  
and is subject to change or cancellation without notice.  
Commercial, Industrial and Military Temperature Ranges  
TTL Compatible Inputs and Outputs  
FIG. 1 PIN CONFIGURATION FOR WS512K32V-XHX  
PIN DESCRIPTION  
TOP VIEW  
1
12  
23  
34  
45  
56  
I/O0-31 Data Inputs/Outputs  
A0-18  
WE1-4  
CS1-4  
OE  
VCC  
GND  
NC  
Address Inputs  
Write Enables  
Chip Selects  
Output Enable  
Power Supply  
Ground  
I/O  
I/O  
8
9
WE  
2
I/O15  
I/O14  
I/O13  
I/O12  
OE  
I/O24  
I/O25  
I/O26  
V
CC  
I/O31  
I/O30  
I/O29  
I/O28  
CS2  
CS  
4
I/O10  
GND  
I/O11  
WE  
4
A
A
A
A
A
13  
14  
15  
16  
17  
A
6
7
I/O27  
Not Connected  
A10  
A11  
A12  
VCC  
A
A
3
4
5
3
3
A0  
A1  
A2  
A18  
NC  
A
WE1  
A
8
9
A
BLOCK DIAGRAM  
I/O  
I/O  
I/O  
I/O  
7
A
WE  
CS  
I/O23  
I/O22  
I/O21  
I/O20  
WE3 CS3  
WE4 CS4  
WE1 CS1  
WE2 CS2  
OE  
A0-18  
I/O  
I/O  
I/O  
0
1
2
CS  
NC  
I/O  
1
6
I/O16  
I/O17  
I/O18  
512K x 8  
512K x 8  
5
4
GND  
I/O19  
512K x 8  
512K x 8  
3
8
8
8
8
11  
22  
33  
44  
55  
66  
I/O16-23  
I/O24-31  
I/O0-7  
I/O8-15  
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
February 2000 Rev. 2  

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