生命周期: | Obsolete | 包装说明: | 23.90 MM, LOW PROFILE, CERAMIC, QFP-68 |
Reach Compliance Code: | unknown | 风险等级: | 5.55 |
最长访问时间: | 15 ns | 其他特性: | USER CONFIGURABLE AS 2M X 8 |
备用内存宽度: | 16 | I/O 类型: | COMMON |
JESD-30 代码: | S-CQFP-G68 | JESD-609代码: | e0 |
内存密度: | 16777216 bit | 内存集成电路类型: | SRAM MODULE |
内存宽度: | 32 | 功能数量: | 1 |
端子数量: | 68 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
组织: | 512KX32 | 输出特性: | 3-STATE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装代码: | QFP |
封装等效代码: | QFP68,.99SQ,50 | 封装形状: | SQUARE |
封装形式: | FLATPACK | 并行/串行: | PARALLEL |
电源: | 3.3 V | 认证状态: | Not Qualified |
最大待机电流: | 0.2 A | 最小待机电流: | 3 V |
子类别: | SRAMs | 最大压摆率: | 0.4 mA |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | MILITARY |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | QUAD |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WS512K32V-15G1UM | ETC |
获取价格 |
512Kx32 SRAM 3.3V MODULE | |
WS512K32V-15G1UMA | ETC |
获取价格 |
512Kx32 SRAM 3.3V MODULE | |
WS512K32V-15G2TC | MICROSEMI |
获取价格 |
SRAM Module, 512KX32, 15ns, CMOS, CQMA68, 22.40 MM, CERAMIC, LQFP-68 | |
WS512K32V-15G2TC | WEDC |
获取价格 |
SRAM Module, 512KX32, 15ns, CMOS, CQMA68, 22.40 MM, CERAMIC, LQFP-68 | |
WS512K32V-15G2TCA | MICROSEMI |
获取价格 |
SRAM Module, 512KX32, 15ns, CMOS, CQMA68, 22.40 MM, CERAMIC, LQFP-68 | |
WS512K32V-15G2TCA | WEDC |
获取价格 |
SRAM Module, 512KX32, 15ns, CMOS, CQMA68, 22.40 MM, CERAMIC, LQFP-68 | |
WS512K32V-15G2TI | MICROSEMI |
获取价格 |
SRAM Module, 512KX32, 15ns, CMOS, CQMA68, 22.40 MM, CERAMIC, LQFP-68 | |
WS512K32V-15G2TIA | WEDC |
获取价格 |
SRAM Module, 512KX32, 15ns, CMOS, CQMA68, 22.40 MM, CERAMIC, LQFP-68 | |
WS512K32V-15G2TIA | MICROSEMI |
获取价格 |
SRAM Module, 512KX32, 15ns, CMOS, CQMA68, 22.40 MM, CERAMIC, LQFP-68 | |
WS512K32V-15G2TM | MICROSEMI |
获取价格 |
SRAM Module, 512KX32, 15ns, CMOS, CQMA68, 22.40 MM, CERAMIC, LQFP-68 |