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WS512K32V-15G2UCA PDF预览

WS512K32V-15G2UCA

更新时间: 2023-04-15 00:00:00
品牌 Logo 应用领域
玛居礼 - MERCURY 静态存储器内存集成电路
页数 文件大小 规格书
8页 921K
描述
SRAM Module, 512KX32, 15ns, CMOS, CQFP68, 22.40 MM, 3.56 MM HEIGHT, CERAMIC, QFP-68

WS512K32V-15G2UCA 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:QFP
包装说明:QFP, QFP68,.99SQ,50针数:68
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.01
最长访问时间:15 ns其他特性:USER CONFIGURABLE AS 2 X 512K X 16 OR 4 X 512K X 8
I/O 类型:COMMONJESD-30 代码:S-CQFP-G68
JESD-609代码:e0长度:22.36 mm
内存密度:16777216 bit内存集成电路类型:SRAM MODULE
内存宽度:32功能数量:1
端子数量:68字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX32输出特性:3-STATE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:QFP
封装等效代码:QFP68,.99SQ,50封装形状:SQUARE
封装形式:FLATPACK并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
认证状态:Not Qualified座面最大高度:3.51 mm
最大待机电流:0.2 A最小待机电流:3 V
子类别:SRAMs最大压摆率:0.4 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:22.36 mm
Base Number Matches:1

WS512K32V-15G2UCA 数据手册

 浏览型号WS512K32V-15G2UCA的Datasheet PDF文件第2页浏览型号WS512K32V-15G2UCA的Datasheet PDF文件第3页浏览型号WS512K32V-15G2UCA的Datasheet PDF文件第4页浏览型号WS512K32V-15G2UCA的Datasheet PDF文件第5页浏览型号WS512K32V-15G2UCA的Datasheet PDF文件第6页浏览型号WS512K32V-15G2UCA的Datasheet PDF文件第7页 
WS512K32V-XXX  
512Kx32 SRAM 3.3V MULTICHIP PACKAGE  
FEATURES  
 Access Times of 15, 17, 20ns  
 Low Voltage Operation  
 Packaging  
 TTL Compatible Inputs and Outputs  
 Fully Static Operation:  
• No clock or refresh required.  
 Three State Output.  
• 66-pin, PGA Type, 1.075 inch square, Hermetic Ceramic  
HIP (Package 400)  
 Built-in Decoupling Caps and Multiple Ground Pins for Low  
• 8 lead, 22.4mm (0.880 inch) CQFP, (G2U), 3.56mm  
(0.140"), (Package 510)  
Noise Operation  
 Weight  
 Organized as 512Kx32; User Congurable as 2x512Kx16  
• WS512K32V-XG2UX - 8 grams typical  
WS512K32NV-XH1X - 13 grams typical  
or 4x512Kx8  
 Commercial, Industrial and Military Temperature Ranges  
 Low Voltage Operation:  
* This product is subject to change without notice.  
• 3.3V ± 10% Power Supply  
 Low Power CMOS  
PIN CONFIGURATION FOR WS512K32NV-XH1X  
Top View  
Pin Description  
1
12  
23  
34  
45  
56  
I/O0-31  
A0-18  
Data Inputs/Outputs  
Address Inputs  
Write Enables  
Chip Selects  
I/O8  
I/O9  
I/O10  
A13  
WE2#  
CS2#  
GND  
I/O11  
A10  
I/O15  
I/O24  
I/O25  
I/O26  
A6  
VCC  
CS4#  
WE4#  
I/O27  
A3  
I/O31  
I/O30  
I/O29  
I/O28  
A0  
I/O14  
I/O13  
I/O12  
OE#  
A18  
WE1-4  
#
CS1-4  
OE#  
VCC  
#
Output Enable  
Power Supply  
Ground  
GND  
NC  
A14  
A7  
Not Connected  
A15  
A11  
NC  
A4  
A1  
A16  
A12  
WE1#  
I/O7  
A8  
A5  
A2  
Block Diagram  
A17  
VCC  
A9  
WE3#  
CS3#  
GND  
I/O19  
I/O23  
I/O22  
I/O21  
I/O20  
WE1# CS1#  
WE2# CS2#  
WE3# CS3#  
WE4# CS4#  
I/O0  
I/O1  
I/O2  
CS1#  
NC  
I/O6  
I/O16  
I/O17  
I/O18  
OE#  
A0-18  
I/O5  
512K x 8  
512K x 8  
512K x 8  
512K x 8  
I/O3  
I/O4  
11  
22  
33  
44  
55  
66  
8
8
8
8
I/O0-7  
I/O8-15  
I/O16-23  
I/O24-31  
Microsemi Corporation reserves the right to change products or specications without notice.  
April 2016 © 2016 Microsemi Corporation. All rights reserved.  
Rev. 14  
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  

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