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WS128K32N-15H1C PDF预览

WS128K32N-15H1C

更新时间: 2024-02-04 08:57:52
品牌 Logo 应用领域
其他 - ETC 内存集成电路静态存储器
页数 文件大小 规格书
9页 160K
描述
x32 SRAM Module

WS128K32N-15H1C 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66Reach Compliance Code:unknown
风险等级:5.61最长访问时间:15 ns
其他特性:USER CONFIGURABLE AS 512K X 8JESD-30 代码:S-CPGA-P66
JESD-609代码:e0长度:27.3 mm
内存密度:4194304 bit内存集成电路类型:SRAM MODULE
内存宽度:32功能数量:1
端子数量:66字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:128KX32封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:PGA封装形状:SQUARE
封装形式:GRID ARRAY并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
筛选级别:MIL-STD-883座面最大高度:4.6 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子面层:TIN LEAD端子形式:PIN/PEG
端子节距:2.54 mm端子位置:PERPENDICULAR
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:27.3 mm
Base Number Matches:1

WS128K32N-15H1C 数据手册

 浏览型号WS128K32N-15H1C的Datasheet PDF文件第2页浏览型号WS128K32N-15H1C的Datasheet PDF文件第3页浏览型号WS128K32N-15H1C的Datasheet PDF文件第4页浏览型号WS128K32N-15H1C的Datasheet PDF文件第5页浏览型号WS128K32N-15H1C的Datasheet PDF文件第6页浏览型号WS128K32N-15H1C的Datasheet PDF文件第7页 
WS128K32-XXX  
HI-RELIABILITY PRODUCT  
128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595  
FEATURES  
Commercial, Industrial and Military Temperature  
Access Times of 15, 17, 20, 25, 35, 45, 55ns  
MIL-STD-883 Compliant Devices Available  
Packaging  
Ranges  
5 Volt Power Supply  
Low Power CMOS  
• 66 pin, PGA Type, 1.075" square, Hermetic Ceramic  
HIP (Package 400)  
TTL Compatible Inputs and Outputs  
• 68 lead, 40mm CQFP (G4T), 3.56mm (0.140")  
(Package 502).  
Built in Decoupling Caps and Multiple Ground Pins for  
Low Noise Operation  
• 68 lead, 22.4mm CQFP (G2T), 4.57mm (0.180"),  
(Package 509)  
Weight:  
WS128K32-XG1UX - 5 grams typical  
WS128K32-XG2TX - 8 grams typical  
WS128K32-XH1X - 13 grams typical  
WS128K32-XG4TX - 20 grams typical  
• 68 lead, 22.4mm Low Profile CQFP (G1U), 3.57mm  
(0.140"), (Package 519)  
Organized as 128Kx32; User Configurable as 256Kx16  
All devices are upgradeable to 512Kx32  
or 512Kx8  
Low Power Data Retention - only available in G2T  
package type  
FIG. 1 PIN CONFIGURATION FOR WS128K32N-XH1X  
PIN DESCRIPTION  
TOP VIEW  
I/O0-31 Data Inputs/Outputs  
1
12  
23  
34  
45  
56  
A0-16  
WE1-4  
CS1-4  
OE  
Address Inputs  
Write Enables  
Chip Selects  
Output Enable  
Power Supply  
Ground  
I/O  
I/O  
8
9
WE  
CS  
2
I/O15  
I/O14  
I/O13  
I/O12  
OE  
I/O24  
I/O25  
I/O26  
V
CC  
I/O31  
I/O30  
I/O29  
I/O28  
2
CS  
4
I/O10  
GND  
I/O11  
WE  
4
VCC  
A13  
A14  
A15  
A16  
A
6
7
I/O27  
GND  
NC  
A10  
A11  
A12  
VCC  
A
A
3
4
5
3
3
A0  
A1  
A2  
Not Connected  
NC  
NC  
A
WE1  
A
8
9
A
BLOCK DIAGRAM  
NC  
I/O  
I/O  
I/O  
I/O  
7
A
WE  
CS  
I/O23  
I/O22  
I/O21  
I/O20  
WE1CS1  
WE2CS2  
WE3CS3  
WE4CS4  
OE  
0-16  
I/O  
I/O  
I/O  
0
CS  
NC  
I/O  
1
6
I/O16  
I/O17  
I/O18  
A
1
2
5
4
GND  
I/O19  
128K x 8  
128K x 8  
128K x 8  
128K x 8  
3
8
8
8
8
11  
22  
33  
44  
55  
66  
I/O16-23  
I/O24-31  
I/O0-7  
I/O8-15  
January 2001 Rev. 7  
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  

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