Datasheet > WPR65N640

WPR65N640

更新时间： 2024-09-17 14:55:31

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	574K
描述
功率金氧半电晶体

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中文翻译

获取价格

数据手册

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WPR65N640 数据手册

WPR65N640-HAF

N-Channel Enhancement Mode MOSFET

Drain

Features

• Low R_DS(on)

• Low Gate Charge

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Source

Application

1.Gate 2.Drain 3.Source

TO-252 Plastic Package

• DC-DC converters

• Lighting

Key Parameters

Parameter

BV_DSS

Value

Unit

650

0.64 @ V_GS= 10 V

R_DS(ON)Max

V_GS(th)typ

Q_gtyp

10 @ V_GS= 10 V

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

V_DS

Value

650

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 30

T_c= 25℃

T_c= 100℃

6.4

Drain Current

I_D

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

2.1

Single Pulse Avalanche Energy ²⁾

Power Dissipation

E_AS

174

℃

P_D

61.4

T_c= 25℃

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

Unit

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 79 mH, R_g= 25 Ω, I_AS= 2.1 A, V_GS= 10 V.

℃

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 15/08/2023 Rev: 03

12 3 4 5 6 7

中文翻译

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