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WM71008-NBSD-DATR PDF预览

WM71008-NBSD-DATR

更新时间: 2024-02-17 11:58:05
品牌 Logo 应用领域
铁电 - RAMTRON 光电二极管内存集成电路
页数 文件大小 规格书
17页 1898K
描述
Memory Circuit, PDSO8, 3 X 3 MM, 0.65 MM PITCH, GREEN, UDFN-8

WM71008-NBSD-DATR 技术参数

生命周期:Obsolete零件包装代码:DFN
包装说明:,针数:8
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:5.84JESD-30 代码:S-PDSO-N8
内存集成电路类型:MEMORY CIRCUIT端子数量:8
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:DUALBase Number Matches:1

WM71008-NBSD-DATR 数据手册

 浏览型号WM71008-NBSD-DATR的Datasheet PDF文件第2页浏览型号WM71008-NBSD-DATR的Datasheet PDF文件第3页浏览型号WM71008-NBSD-DATR的Datasheet PDF文件第4页浏览型号WM71008-NBSD-DATR的Datasheet PDF文件第6页浏览型号WM71008-NBSD-DATR的Datasheet PDF文件第7页浏览型号WM71008-NBSD-DATR的Datasheet PDF文件第8页 
WM710xx – Secure F-RAM with Gen-2 RFID  
GEN2 WM710XX MEMORY BANKS  
The RFID memory banks reside in Ramtron’s non-volatile F-RAM memory. F-RAM brings many benefits to  
the WM710xx. The first benefit is the size of the memory itself – up to 16k-bit, most of which is available in  
the USER memory bank. F-RAM’s impact on the Gen2 protocol is most dramatically seen when writing to  
WM710xx memory. Unlike EEPROM memory, no charge pump or memory soak time is required to write to  
WM710xx memory, resulting in zero time and zero power penalties. The write cycle is completed  
immediately, allowing an interrogator to continue writing additional data to memory with no time penalty  
incurred due to the memory itself. A comparison between F-RAM and EEPROM memories is shown in Figure  
3. The figure shows the minimum number of Gen2 instructions required to perform a SELECT,  
INVENTORY, and ACCESS sequence of commands to write a data word to memory. The same interrogator  
command sequence is transmitted to the WM710xx and an EEPROM-based RFID. The effect of the EEPROM  
time penalty is shown within the context of the protocol.  
Figure 3. Gen2 Memory Write Cycle Comparison: F-RAM vs. EEPROM Memories  
RESERVED: KILL Password:  
The kill password provides a mechanism to permanently disable the WM710xx RFID from responding to any  
and all Gen2 interrogator commands. The mandatory KILL command can be issued by a RFID interrogator in  
either the OPEN or SECURED states. The WM710xx is permanently killed through a four-instruction  
sequence of REQRN and KILL commands as detailed in the Gen2 standard. The KILL password is a 32-bit  
value stored as 2 16-bit data words in reserved memory. The most significant KILL password is stored in  
reserved memory bank address 0x00 with the least significant word stored in reserved memory bank address  
0x01. The kill function can be permanently disabled by setting both KILL password words to 0x0000, and  
permanently locking the KILL password in the reserved memory bank. Once the kill password has been set, it  
should be permanently locked using the LOCK command. The WM710xx is shipped from the factory with the  
kill password memory unlocked.  
RESERVED: ACCESS Password:  
The access password provides a security mechanism to prevent unauthorized RFID interrogators from writing  
to WM710xx memory. Non-zero access passwords require the WM710xx be placed in the SECURED state  
prior to writing to it. This is accomplished through four consecutive REQRN and ACCESS commands as  
described in the Gen2 standard. An access password with a value of zero requires no authentication prior to  
writing to WM710xx memory. The ACCESS password is a 32-bit value stored as 2 16-bit data words in  
reserved memory. The most significant ACCESS password is stored in reserved memory bank address 0x02  
with the least significant word stored in reserved memory bank address 0x03. Once the access password has  
Rev. 1.2  
Sept. 2010  
Page 5 of 17  

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