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WM72016-NBSD-DS PDF预览

WM72016-NBSD-DS

更新时间: 2024-02-23 11:38:33
品牌 Logo 应用领域
铁电 - RAMTRON 光电二极管内存集成电路
页数 文件大小 规格书
21页 1955K
描述
Memory Circuit, PDSO8, 3 X3 MM, 0.65 MM PITCH, GREEN, UDFN-8

WM72016-NBSD-DS 技术参数

生命周期:Obsolete零件包装代码:DFN
包装说明:,针数:8
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:5.66JESD-30 代码:S-PDSO-N8
内存集成电路类型:MEMORY CIRCUIT端子数量:8
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:DUALBase Number Matches:1

WM72016-NBSD-DS 数据手册

 浏览型号WM72016-NBSD-DS的Datasheet PDF文件第2页浏览型号WM72016-NBSD-DS的Datasheet PDF文件第3页浏览型号WM72016-NBSD-DS的Datasheet PDF文件第4页浏览型号WM72016-NBSD-DS的Datasheet PDF文件第5页浏览型号WM72016-NBSD-DS的Datasheet PDF文件第6页浏览型号WM72016-NBSD-DS的Datasheet PDF文件第7页 
Preliminary  
WM72016  
16Kbit Secure F-RAM Memory with Gen-2 RFID  
Access & Serial Port Direct Memory Access  
DESCRIPTION  
FEATURES  
The WM72016 is a RFID transponder IC with  
nonvolatile memory employing an advanced  
ferroelectric process. A ferroelectric random access  
memory, or F-RAM, is nonvolatile and performs  
reads and writes like a RAM. It provides reliable data  
retention for 20 years while eliminating the  
complexities, overhead, and system level reliability  
problems caused by EEPROM and other nonvolatile  
memories.  
16 Kbit Ferroelectric Nonvolatile RAM  
Organized as 1024 x 16 bits  
Very High Read/Write Endurance (> 1015)  
20-Year Data Retention  
Gamma Stability Demonstrated to > 30 kGy  
Symmetric Read/Write Operation  
Advanced High-Reliability Ferroelectric Process  
Interface and Security Features  
EPC Class 1 Gen2 (ISO18000-6C) RFID  
Unlike EEPROM’s, the WM72016 write operations  
are zero power – there is no power or speed premium  
paid for executing writes into the WM72016 as  
compared to read power and speed. Operation of the  
memory is fully symmetric: identical read and write  
characteristics in terms of power, speed, and  
reliability.  
Compliant Interface (revision 1.2.0)  
192-Bit Memory: 96-Bit Electronic Product  
Code™ (EPC), 32-Bit Access Password, 32-Bit  
KILL Password, 64-Bit TID Memory (Factory  
Programmed and Locked)  
Inventory, Read, Write and Erase features  
Kill Command  
Block Permalock Command  
The WM72016’s RFID interface is compliant with  
the EPC Class-1 Generation-2 UHF RFID Protocol  
for Communications at 860 MHz – 960 MHz,  
Version 1.2.0 Specification for RFID Air Interface.  
Access Command  
UHF carrier frequencies from 860 MHz to 960  
MHz ISM band, ASK demodulation  
Link frequencies up to 640Kbps and reader-to-  
tag rates up to 128Kbps read and write  
transmission  
The WM72016 is a two chip configuration offered in  
various forms: standard IC package or wafers. All  
specifications discussed herein are applicable to the  
combined chipset operation.  
Serial Port Interface  
Custom Features  
Stored Address Pointer to Improve Data Write  
Speed  
RFID  
WM72016  
Reader  
Stored Address Pointer Lock  
Block Write Command  
RFID Tag  
(Class-1  
with F-RAM  
Gen-2)  
Variable USER memory block size support  
Interrupt Generation  
Ultra Low Power Operation  
Memory Read/Write Sensitivity: < -6 dBm (typ.)  
Figure 1. System Block Diagram  
Industry Standard Configurations  
Industrial Temperature -40° C to +85° C  
Bumped Wafers  
8-pin UDFN  
This is a product that has fixed target specifications but are  
subject to change pending characterization results.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
http://www.ramtron.com  
Rev. 1.2  
Sept. 2010  
Page 1 of 21  

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