Datasheet > WM72016-NBSD-DS

WM72016-NBSD-DS

更新时间： 2024-11-13 20:05:27

品牌	Logo	应用领域
铁电 - RAMTRON		光电二极管内存集成电路
页数	文件大小	规格书
21页	1955K
描述
Memory Circuit, PDSO8, 3 X3 MM, 0.65 MM PITCH, GREEN, UDFN-8

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

WM72016-NBSD-DS 技术参数

生命周期：	Obsolete	零件包装代码：	DFN
包装说明：	,	针数：	8
Reach Compliance Code：	unknown	HTS代码：	8542.32.00.71
风险等级：	5.66	JESD-30 代码：	S-PDSO-N8
内存集成电路类型：	MEMORY CIRCUIT	端子数量：	8
封装主体材料：	PLASTIC/EPOXY	封装形状：	SQUARE
封装形式：	SMALL OUTLINE	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	DUAL	Base Number Matches：	1

WM72016-NBSD-DS 数据手册

Preliminary

WM72016

16Kbit Secure F-RAM Memory with Gen-2 RFID

Access & Serial Port Direct Memory Access

DESCRIPTION

FEATURES

The WM72016 is a RFID transponder IC with

nonvolatile memory employing an advanced

ferroelectric process. A ferroelectric random access

memory, or F-RAM, is nonvolatile and performs

reads and writes like a RAM. It provides reliable data

retention for 20 years while eliminating the

complexities, overhead, and system level reliability

problems caused by EEPROM and other nonvolatile

memories.

16 Kbit Ferroelectric Nonvolatile RAM

•

Organized as 1024 x 16 bits

Very High Read/Write Endurance (> 10¹⁵)

20-Year Data Retention

Gamma Stability Demonstrated to > 30 kGy

Symmetric Read/Write Operation

Advanced High-Reliability Ferroelectric Process

Interface and Security Features

•

EPC Class 1 Gen2 (ISO18000-6C) RFID

Unlike EEPROM’s, the WM72016 write operations

are zero power – there is no power or speed premium

paid for executing writes into the WM72016 as

compared to read power and speed. Operation of the

memory is fully symmetric: identical read and write

characteristics in terms of power, speed, and

reliability.

Compliant Interface (revision 1.2.0)

192-Bit Memory: 96-Bit Electronic Product

Code™ (EPC), 32-Bit Access Password, 32-Bit

KILL Password, 64-Bit TID Memory (Factory

Programmed and Locked)

•

Inventory, Read, Write and Erase features

Kill Command

Block Permalock Command

The WM72016’s RFID interface is compliant with

the EPC Class-1 Generation-2 UHF RFID Protocol

for Communications at 860 MHz – 960 MHz,

Version 1.2.0 Specification for RFID Air Interface.

Access Command

UHF carrier frequencies from 860 MHz to 960

MHz ISM band, ASK demodulation

Link frequencies up to 640Kbps and reader-to-

tag rates up to 128Kbps read and write

transmission

•

The WM72016 is a two chip configuration offered in

various forms: standard IC package or wafers. All

specifications discussed herein are applicable to the

combined chipset operation.

•

Serial Port Interface

Custom Features

•

Stored Address Pointer to Improve Data Write

Speed

RFID

WM72016

Reader

•

Stored Address Pointer Lock

Block Write Command

RFID Tag

(Class-1

with F-RAM

Gen-2)

Variable USER memory block size support

Interrupt Generation

Ultra Low Power Operation

Memory Read/Write Sensitivity: < -6 dBm (typ.)

Figure 1. System Block Diagram

•

Industry Standard Configurations

•

Industrial Temperature -40° C to +85° C

Bumped Wafers

8-pin UDFN

This is a product that has fixed target specifications but are

subject to change pending characterization results.

Ramtron International Corporation

1850 Ramtron Drive, Colorado Springs, CO 80921

(800) 545-FRAM, (719) 481-7000

http://www.ramtron.com

Rev. 1.2

Sept. 2010

Page 1 of 21

12 3 4 5 6 7...21

中文翻译

下载PDF

与WM72016-NBSD-DS相关器件

型号	品牌	获取价格	描述	数据表
WM72016-NBSD-DSTR	RAMTRON	获取价格	Memory Circuit, PDSO8, 3 X3 MM, 0.65 MM PITCH, GREEN, UDFN-8
WM7210	WOLFSON	获取价格	Top Port Digital Silicon Microphone
WM7210-1702-MS5-M-REV1	WOLFSON	获取价格	Schematic and Layout
WM7210IMS/RV	WOLFSON	获取价格	Top Port Digital Silicon Microphone
WM7210IMS/V	WOLFSON	获取价格	Top Port Digital Silicon Microphone
WM7210IMSE/RV	WOLFSON	获取价格	Top Port Digital Silicon Microphone
WM7210IMSE/V	WOLFSON	获取价格	Top Port Digital Silicon Microphone
WM7216	CIRRUS	获取价格	Low Power Top Port Digital Silicon Microphone
WM7216E	CIRRUS	获取价格	Low Power Top Port Digital Silicon Microphone
WM7216IMSE/RV	CIRRUS	获取价格	Consumer Circuit, CMOS, 4 X 3 MM, 1 MM HEIGHT, 0.85 MM PITCH, HALOGEN AND LEAD FREE, LGA-

与WM72016-NBSD-DS相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

25
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

10
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

11
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

WM72016-NBSD-DS

WM72016-NBSD-DS 技术参数

WM72016-NBSD-DS 数据手册

与WM72016-NBSD-DS相关器件

与WM72016-NBSD-DS相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

WM72016-NBSD-DS

WM72016-NBSD-DS 技术参数

WM72016-NBSD-DS 数据手册

与WM72016-NBSD-DS相关器件

与WM72016-NBSD-DS相关文章

您还可以找

您在本页遇到什么问题？