Datasheet > WM72016-6-DGTR

WM72016-6-DGTR

更新时间： 2024-01-18 18:41:22

品牌	Logo	应用领域
铁电 - RAMTRON		存储
页数	文件大小	规格书
32页	445K
描述
16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access

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技术参数
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WM72016-6-DGTR 技术参数

是否Rohs认证：	符合	生命周期：	Active
零件包装代码：	DFN	包装说明：	HVSON,
针数：	8	Reach Compliance Code：	compliant
HTS代码：	8542.32.00.71	风险等级：	5.25
JESD-30 代码：	S-PDSO-N8	长度：	3 mm
内存密度：	16384 bit	内存集成电路类型：	MEMORY CIRCUIT
内存宽度：	16	湿度敏感等级：	1
功能数量：	1	端子数量：	8
字数：	1024 words	字数代码：	1000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	1KX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	HVSON
封装形状：	SQUARE	封装形式：	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度（摄氏度）：	NOT SPECIFIED	座面最大高度：	0.6 mm
最大供电电压 (Vsup)：	3 V	最小供电电压 (Vsup)：	2.1 V
标称供电电压 (Vsup)：	2.5 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子形式：	NO LEAD	端子节距：	0.65 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	3 mm	Base Number Matches：	1

WM72016-6-DGTR 数据手册

Preliminary

WM72016

16Kbit Secure F-RAM Memory with Gen-2 RFID

Access & Serial Port Direct Memory Access

DESCRIPTION

FEATURES

The WM72016 is a RFID transponder IC with

nonvolatile memory employing an advanced

ferroelectric process. A ferroelectric random access

memory, or F-RAM, is nonvolatile and performs

reads and writes like a RAM. It provides reliable data

retention for 20 years while eliminating the

complexities, overhead, and system level reliability

problems caused by EEPROM and other nonvolatile

memories.

16 Kbit Ferroelectric Nonvolatile RAM



Organized as 1024 x 16 bits

Very High Read/Write Endurance (> 10¹⁴)

20-Year Data Retention

Gamma Stability Demonstrated to > 30 kGy

Symmetric Read/Write Operation

Advanced High-Reliability Ferroelectric Process

Interface and Security Features



EPC Class 1 Gen2 (ISO18000-6C) RFID

Unlike EEPROM‟s, the WM72016 write operations

are zero power – there is no power or speed premium

paid for executing writes into the WM72016 as

compared to read power and speed. Operation of the

memory is fully symmetric: it has an equivalent read

and write range.

Compatible Interface (revision 1.2.0)

192-Bit Memory: 96-Bit Electronic Product

Code™ (EPC), 32-Bit Access Password, 32-Bit

KILL Password, 64-Bit TID Memory (Factory

Programmed and Locked)

Inventory, Read, Write and Erase features

Kill Command



The WM72016‟s RFID interface is compatible with

the EPC Class-1 Generation-2 UHF RFID Protocol

for Communications at 860 MHz – 960 MHz,

Version 1.2.0 Specification for RFID Air Interface.

Block Permalock Command

Access Command

UHF carrier frequencies from 860 MHz to 960

MHz ISM band, ASK demodulation

Tag-to-reader link frequencies up to 640Kbps

Reader-to-tag asymptotical transmission rates up

to 128Kbps



The WM72016 is a two chip configuration offered in

various forms: standard IC package or wafers. All

specifications discussed herein are applicable to the

combined chipset operation.



Supports FM0 and MMS data encoding formats

Serial Port Interface

Custom Features

RFID

WM72016

Reader



Stored Address Pointer to Improve Data Write

Speed

RFID Tag

(Class-1

with F-RAM

Gen-2)



Stored Address Pointer Lock

Block Write Command

Variable USER memory block size support

Interrupt Generation

Figure 1. System Block Diagram

Ultra Low Power Operation

Memory Read/Write Sensitivity: < -6 dBm (typ.)



Industry Standard Configurations



Industrial Temperature -40 C to +85 C

Bumped Wafers

8-pin UDFN

This is a product that has fixed target specifications but are

subject to change pending characterization results.

Ramtron International Corporation

1850 Ramtron Drive, Colorado Springs, CO 80921

(800) 545-FRAM, (719) 481-7000

http://www.ramtron.com

Rev. 1.4

May 2011

Page 1 of 32

12 3 4 5 6 7...32

中文翻译

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与WM72016-6-DGTR相关器件

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